ISK057N04LM6ATLA1 vs IPB021N10NM5LF2ATMA1 Comparison

Detailed side-by-side comparison of ISK057N04LM6ATLA1 by Infineon and IPB021N10NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISK057N04LM6ATLA1

ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 βœ“ Active
Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 βœ“ Active

Specification Comparison

Parameter ISK057N04LM6ATLA1 IPB021N10NM5LF2ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $2.75
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 β€”
Transistor Type N-Channel MOSFET β€”
Technology Trench (OptiMOS 6) OptiMOS 5 trench-gate MOSFET (Linear FET optimized)
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at Tc 64 A β€”
Continuous Drain Current (ID) at Ta [DATA_NEEDED: ID at TA=25C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
RDS(on) max at VGS=10V [DATA_NEEDED: RDS(on) max] β€”
RDS(on) typical at VGS=10V 5.7 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Gate Charge (Qg total) [DATA_NEEDED: Qg total] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Power Dissipation (PD) at Ta=25C 2.1 W β€”
Power Dissipation (PD) at Tc=25C 39.1 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range]
Package / Case PG-VSON-6-1 (PQFN 2x2) β€”
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 [DATA_NEEDED: confirm MSL rating from manufacturer datasheet]
Packaging Tape & Reel (TR) β€”
DigiKey Part Number 448-ISK057N04LM6ATLA1TR-ND β€”
Part Family β€” OptiMOS 5 Linear FET 2
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 100 V
Continuous Drain Current (I_D) at T_C=25Β°C β€” 176 A
Continuous Drain Current (I_D) at T_A=25Β°C β€” 30 A
R_DS(on) Maximum β€” 2.1 mΞ©
Gate-Source Voltage (V_GS) Maximum β€” Β±20 V [DATA_NEEDED: absolute max rated V_GS]
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical/min]
Power Dissipation (P_D) at T_C=25Β°C β€” 375 W
Power Dissipation (P_D) at T_A=25Β°C β€” 3.8 W
Package β€” PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab)
Drive Voltage (Max R_DS(on), Min R_DS(on)) β€” 10 V, 15 V

Datasheets & Resources

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