ISK057N04LM6ATLA1 vs IPB031N08N5ATMA1 Comparison
Detailed side-by-side comparison of ISK057N04LM6ATLA1 by Infineon and IPB031N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISK057N04LM6ATLA1
ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
ISK057N04LM6ATLA1 β ActiveInfineon
IPB031N08N5ATMA1 - 80V 120A OptiMOS 5 N-Channel MOSFET | Infineon
IPB031N08N5ATMA1 β ActiveSpecification Comparison
| Parameter | ISK057N04LM6ATLA1 | IPB031N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $2.62 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Trench (OptiMOS 6) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tc | 64 A | β |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| RDS(on) typical at VGS=10V | 5.7 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 39.1 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55 C to +175 C |
| Package / Case | PG-VSON-6-1 (PQFN 2x2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (TR) | β |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | β |
| Drain-Source Voltage (VDS) Max | β | 80 V |
| Continuous Drain Current (ID) | β | 120 A (Tc) |
| Power Dissipation (PD) Max | β | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | β | 3.1 mOhm (VGS=10V) |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) Typ | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Package | β | PG-TO263-3 (D2PAK) |
| Pin Count | β | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | β | Drain (electrically connected to pin) |
| Automotive Qualified | β | Yes (per Arrow listing) |