ISK057N04LM6ATLA1 vs IQE020N04LM6CGATMA1 Comparison
Detailed side-by-side comparison of ISK057N04LM6ATLA1 by Infineon and IQE020N04LM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISK057N04LM6ATLA1
ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
ISK057N04LM6ATLA1 β ActiveInfineon
IQE020N04LM6CGATMA1
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveSpecification Comparison
| Parameter | ISK057N04LM6ATLA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $1.75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 6 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Trench (OptiMOS 6) | OptiMOS 6, TrenchFET-class |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tc | 64 A | β |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| RDS(on) typical at VGS=10V | 5.7 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 39.1 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55Β°C to +150Β°C |
| Package / Case | PG-VSON-6-1 (PQFN 2x2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (TR) | β |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 25 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 166 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | β | 2.0 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: Qg value] |
| Package | β | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Configuration | β | Single N-Channel, source-down |