ISK057N04LM6ATLA1 vs ISK057N04LM6ATSA1 Comparison
Detailed side-by-side comparison of ISK057N04LM6ATLA1 by Infineon and ISK057N04LM6ATSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISK057N04LM6ATLA1
ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
ISK057N04LM6ATLA1 β ActiveInfineon
ISK057N04LM6ATSA1
ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1
ISK057N04LM6ATSA1 β ActiveSpecification Comparison
| Parameter | ISK057N04LM6ATLA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.30 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Trench (OptiMOS 6) | OptiMOS 6 Trench |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tc | 64 A | β |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| RDS(on) typical at VGS=10V | 5.7 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2.3 V (typ) |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | 870 pF |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 39.1 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +150C |
| Package / Case | PG-VSON-6-1 (PQFN 2x2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Packaging | Tape & Reel (TR) | β |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25C | β | 15 A |
| Continuous Drain Current (ID) at Tc=25C | β | 64 A |
| Power Dissipation (PD) at Ta | β | 2.1 W |
| Power Dissipation (PD) at Tc | β | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | β | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | β | 8.3 mOhm |
| Total Gate Charge (Qg) at VGS=10V | β | 12 nC |
| Output Capacitance (Coss) | β | 290 pF |
| Reverse Transfer Capacitance (Crss) | β | 21 pF |
| Package | β | PG-VSON-6-1 (PQFN 2x2 mm) |