ISK057N04LM6ATSA1 vs IQE020N04LM6CGATMA1 Comparison
Detailed side-by-side comparison of ISK057N04LM6ATSA1 by Infineon and IQE020N04LM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISK057N04LM6ATSA1
ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1
ISK057N04LM6ATSA1 β ActiveInfineon
IQE020N04LM6CGATMA1
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveSpecification Comparison
| Parameter | ISK057N04LM6ATSA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.30 | $1.75 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25C | 15 A | β |
| Continuous Drain Current (ID) at Tc=25C | 64 A | β |
| Power Dissipation (PD) at Ta | 2.1 W | β |
| Power Dissipation (PD) at Tc | 39.1 W | β |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: typical RDS(on) at 10V] | β |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | β |
| Total Gate Charge (Qg) at VGS=10V | 12 nC | β |
| Input Capacitance (Ciss) | 870 pF | β |
| Output Capacitance (Coss) | 290 pF | β |
| Reverse Transfer Capacitance (Crss) | 21 pF | β |
| Operating Temperature Range | -55C to +150C | -55Β°C to +150Β°C |
| Package | PG-VSON-6-1 (PQFN 2x2 mm) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 6 Trench | OptiMOS 6, TrenchFET-class |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25Β°C | β | 25 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 166 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | β | 2.0 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: Qg value] |
| Configuration | β | Single N-Channel, source-down |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |