ISZ019N03L5SATMA1 vs BSC009NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and BSC009NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveInfineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΞ© 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | ISZ019N03L5SATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (<= 40V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 22 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| RDS(on) at VGS=10V | 1.9 mΞ© (typical, ID=20A) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | β |
| Gate-Source Voltage Rating (VGS) | Β±20 V | β |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | β |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | β |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ max) | -55Β°C to +150Β°C |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS / REACH | Compliant | β |
| Avalanche Rated | Yes | β |
| RG-tested | 100% | β |
| Manufacturer Part Number | β | BSC009NE2LS5IATMA1 |
| Technology | β | OptiMOSβ’ 5 (25V/30V family) |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | β | 25 V |
| Gate-Source Voltage (V_GS) max | β | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | β | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | β | 0.95 mΞ© |
| Continuous Drain Current (I_D) @ T_A=25Β°C | β | 40 A |
| Continuous Drain Current (I_D) @ T_C=25Β°C | β | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | β | 2.5 W |
| Power Dissipation (P_D) @ T_C | β | 74 W |
| Total Gate Charge (Q_G) typ | β | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | β | 3200 pF |
| Terminal Finish | β | Matte Tin (e3 per JESD-609) |
| Number of Terminals | β | 8 |
| RoHS Status | β | Compliant |