ISZ019N03L5SATMA1 vs BSC014N04LSATMA1 Comparison

Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active

Specification Comparison

Parameter ISZ019N03L5SATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 (<= 40V) β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 22 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
RDS(on) at VGS=10V 1.9 mΞ© (typical, ID=20A) β€”
Gate Threshold Voltage (VGS(th)) 2 V (typical) β€”
Gate-Source Voltage Rating (VGS) Β±20 V β€”
Total Gate Charge (Qg) 44 nC at VGS=10V β€”
Input Capacitance (Ciss) 2800 pF at VDS=15V β€”
Package PG-TSDSON-8-FL (5x6 mm) SuperSO8 (TDSON-8 FL) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (TJ max) -55C to +175C
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS / REACH Compliant β€”
Avalanche Rated Yes β€”
RG-tested 100% β€”
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 32 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 96 W
Gate-Source Voltage (VGS) max β€” 20 V
Technology β€” Trench (OptiMOS 5, thin-wafer)
RoHS Status β€” Compliant

Datasheets & Resources

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