ISZ019N03L5SATMA1 vs IQE012N03LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and IQE012N03LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE012N03LM5CGSCATMA1

IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter ISZ019N03L5SATMA1 IQE012N03LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.55
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 5 (<= 40V) β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 22 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
RDS(on) at VGS=10V 1.9 mΞ© (typical, ID=20A) β€”
Gate Threshold Voltage (VGS(th)) 2 V (typical) 2 V (typ, per Merlin listing)
Gate-Source Voltage Rating (VGS) Β±20 V β€”
Total Gate Charge (Qg) 44 nC at VGS=10V β€”
Input Capacitance (Ciss) 2800 pF at VDS=15V β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-WHTFN-9-1 (PQFN 3.3 Γ— 3.3 mm Source-Down dual-side cooled)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (TJ max) β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, floor life unlimited)
RoHS / REACH Compliant β€”
Avalanche Rated Yes β€”
RG-tested 100% β€”
FET Type β€” N-Channel
Technology β€” OptiMOS 5 (trench MOSFET)
Continuous Drain Current (ID) @ Ta β€” 34 A
Continuous Drain Current (ID) @ Tc β€” 224 A
Maximum RDS(on) @ VGS=10V β€” 1.15 mΞ©
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 107 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote