ISZ028N03LF2SATMA1 vs ISC009N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISZ028N03LF2SATMA1 by Infineon and ISC009N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ028N03LF2SATMA1 ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon

ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon

ISZ028N03LF2SATMA1 βœ“ Active
Infineon
ISC009N03LF2SATMA1

ISC009N03LF2SATMA1 - 30V 341A 0.9mΞ© N-Channel MOSFET | Infineon

ISC009N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISZ028N03LF2SATMA1 ISC009N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $1.48
FET Type N-Channel β€”
Technology StrongIRFET 2 (Trench MOSFET) OptiMOSβ„’ trench
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Tc 128 A 341 A
Continuous Drain Current (ID) at Ta 22 A 43 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate Threshold Voltage (VGS(th)) 2.35 V 2.35 V (typ)
On-Resistance (RDS(on)) max 2.8 mΞ© β€”
Power Dissipation (Tc) 83 W β€”
Power Dissipation (Ta) 3 W β€”
Package PG-TSDSON-8 FL (FL = flat lead) PG-TDSON-8-62 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction, typical) -55 Β°C to +175 Β°C (junction, [DATA_NEEDED: exact operating range from datasheet])
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) β€”
RoHS Status Compliant Compliant
MSL Level 1 [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes (single-pulse) β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] β€”
Transistor Type β€” N-Channel MOSFET
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 188 W
On-Resistance RDS(on) max β€” 0.9 mΞ©
Gate Drive Voltage (VGS) β€” 10 V (typical for rated RDS(on))

Datasheets & Resources

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