ISZ028N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of ISZ028N03LF2SATMA1 by Infineon and ISC025N08NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveInfineon
ISC025N08NM5LF2ATMA1
ISC025N08NM5LF2ATMA1 - 80V 2.55mΞ© Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | ISZ028N03LF2SATMA1 | ISC025N08NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.74 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | MOSFET (Metal Oxide), OptiMOS 5 LF2 |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Tc | 128 A | β |
| Continuous Drain Current (ID) at Ta | 22 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | β |
| On-Resistance (RDS(on)) max | 2.8 mΞ© | β |
| Power Dissipation (Tc) | 83 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSDSON-8 FL (FL = flat lead) | PG-TDSON-8 FL (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction, typical) | [DATA_NEEDED: operating temperature range] |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Drain-Source Voltage (VDS) Max | β | 80 V |
| Continuous Drain Current (ID) @ TA=25Β°C | β | 23 A |
| Continuous Drain Current (ID) @ TC=25Β°C | β | 198 A |
| On-Resistance (RDS(on)) Max | β | 2.55 mΞ© |
| Gate-Source Threshold (VGS(th)) Max | β | 3.9 V |
| Total Gate Charge (Qg) Max | β | 96 nC |
| Power Dissipation @ TA | β | 3 W |
| Power Dissipation @ TC | β | 217 W |
| Polarity | β | N-Channel |
| Ordering Code Suffix | β | ATMA1 (Tape & Reel, 13-inch) |