ISZ028N03LF2SATMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISZ028N03LF2SATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ028N03LF2SATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.51 |
| FET Type | N-Channel | β |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | β |
| Continuous Drain Current (ID) at Ta | 22 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | β |
| On-Resistance (RDS(on)) max | 2.8 mΞ© | β |
| Power Dissipation (Tc) | 83 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSDSON-8 FL (FL = flat lead) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction, typical) | -55 Β°C to +150 Β°C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 13 nC @ VGS=10 V |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | ISC045N03L5SATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |