ISZ033N03LF2SATMA1 vs BSC0921NDIATMA1 Comparison
Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and BSC0921NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 β ActiveInfineon
BSC0921NDIATMA1
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
BSC0921NDIATMA1 β ActiveSpecification Comparison
| Parameter | ISZ033N03LF2SATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.68 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | β |
| Continuous Drain Current (ID) at TC=25C | 109 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 31 A (per channel, package-limited) |
| Power Dissipation (PD) at TA=25C | 3 W | β |
| Power Dissipation (PD) at TC=25C | 71 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TSDSON-8 FL (8-pin) | PG-TISON-8 (8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | OptiMOS 25V (N-channel) |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Configuration | β | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | β | 17 A (per channel) |
| Total Power Dissipation (PD) | β | 1 W |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | β | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | β | Ultra-low (OptiMOS 25V family characteristic) |
| Operating Temperature | β | -55C to +150C (junction) |
| MSL Level | β | 1 (per Infineon OptiMOS family) |
| Primary Application | β | Synchronous buck converters, VRMs, POL regulators |