ISZ033N03LF2SATMA1 vs ISC015N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and ISC015N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ033N03LF2SATMA1 ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 βœ“ Active
Infineon
ISC015N03LF2SATMA1

ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon

ISC015N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISZ033N03LF2SATMA1 ISC015N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.96
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A 43 A
Continuous Drain Current (ID) at TC=25C 109 A 214 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD) at TA=25C 3 W β€”
Power Dissipation (PD) at TC=25C 71 W β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA β€”
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] β€”
Operating Junction Temperature -55 C to +175 C β€”
Package PG-TSDSON-8 FL (8-pin) PG-TDSON-8-62 (TDSON EP)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOSβ„’ 2 (<= 40 V trench)
Channel Type β€” N-Channel
On-Resistance RDS(on) max at VGS=10V β€” 1.5 mΞ©
Gate Threshold Voltage VGS(th) β€” 2.35 V
Power Dissipation at TA=25C β€” 3 W
Power Dissipation at TC=25C β€” 125 W
Operating Temperature Range β€” -55C to +175C
Lead-Free β€” Yes

Datasheets & Resources

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