ISZ033N03LF2SATMA1 vs ISZ019N03L5SATMA1 Comparison

Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and ISZ019N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ033N03LF2SATMA1 ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISZ033N03LF2SATMA1 ISZ019N03L5SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.48
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A 22 A
Continuous Drain Current (ID) at TC=25C 109 A 40 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD) at TA=25C 3 W β€”
Power Dissipation (PD) at TC=25C 71 W β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA 2 V (typical)
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] 44 nC at VGS=10V
Operating Junction Temperature -55 C to +175 C β€”
Package PG-TSDSON-8 FL (8-pin) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 β€”
RoHS Status Compliant β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 5 (<= 40V)
Polarity / Channel Type β€” N-Channel
RDS(on) at VGS=10V β€” 1.9 mΞ© (typical, ID=20A)
Gate-Source Voltage Rating (VGS) β€” Β±20 V
Input Capacitance (Ciss) β€” 2800 pF at VDS=15V
Operating Temperature Range β€” -55C to +175C (TJ max)
MSL Level β€” 1 (per JEDEC J-STD-020)
RoHS / REACH β€” Compliant
Avalanche Rated β€” Yes
RG-tested β€” 100%

Datasheets & Resources

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