ISZ033N03LF2SATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ033N03LF2SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.49 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | β |
| Continuous Drain Current (ID) at TC=25C | 109 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | 3 W | β |
| Power Dissipation (PD) at TC=25C | 71 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 2.35 V |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg] |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TSDSON-8 FL (8-pin) | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | StrongIRFET 2 (Trench MOSFET) |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Operating Temperature Range | β | -55C to +175C (junction, typical) |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| MSL Level | β | 1 |
| Avalanche Energy Rated | β | Yes (single-pulse) |