ISZ056N03LF2SATMA1 vs IMLT40R011M2HXTMA1 Comparison
Detailed side-by-side comparison of ISZ056N03LF2SATMA1 by Infineon and IMLT40R011M2HXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveInfineon
IMLT40R011M2HXTMA1 - 400V 11mΞ© SiC MOSFET CoolSiC G2 | Infineon
IMLT40R011M2HXTMA1 β ActiveSpecification Comparison
| Parameter | ISZ056N03LF2SATMA1 | IMLT40R011M2HXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $12.80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | StrongIRFET 2 | β |
| Transistor Type | N-Channel MOSFET | N-Channel SiC MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 400 V |
| Continuous Drain Current (ID) at Ta | 16 A | β |
| Continuous Drain Current (ID) at Tc | 72 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 4.5 V (benchmark) |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | β |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-HDSOP-16-8 (surface mount, top-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Product Family | β | CoolSiC MOSFET 400V G2 |
| Continuous Drain Current (ID, Tc) | β | 144 A |
| Power Dissipation (PD, Tc) | β | 429 W |
| On-State Resistance (RDS(on)) | β | 11 mΞ© (typ) |
| Recommended Gate Drive Voltage | β | 0 V to 18 V |
| Technology | β | Silicon Carbide (SiC) Gen-2 |
| Body Diode | β | Commutation-robust fast body diode, low Qrr |
| Avalanche Rating | β | 100% avalanche tested |
| Interconnection Technology | β | XT (best-in-class thermal performance) |
| Operating Mode | β | Enhancement mode |
| Target Topologies | β | 2- and 3-level hard- and soft-switching |
| Target Applications | β | AI server PSU, SMPS, motor drives |