ISZ056N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of ISZ056N03LF2SATMA1 by Infineon and ISC025N08NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveInfineon
ISC025N08NM5LF2ATMA1
ISC025N08NM5LF2ATMA1 - 80V 2.55mΞ© Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | ISZ056N03LF2SATMA1 | ISC025N08NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.74 |
| Manufacturer | Infineon Technologies | β |
| Series | StrongIRFET 2 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 16 A | β |
| Continuous Drain Current (ID) at Tc | 72 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | β |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | β |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Operating Temperature Range | -55 C to +175 C | [DATA_NEEDED: operating temperature range] |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TDSON-8 FL (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide), OptiMOS 5 LF2 |
| Drain-Source Voltage (VDS) Max | β | 80 V |
| Continuous Drain Current (ID) @ TA=25Β°C | β | 23 A |
| Continuous Drain Current (ID) @ TC=25Β°C | β | 198 A |
| On-Resistance (RDS(on)) Max | β | 2.55 mΞ© |
| Gate-Source Threshold (VGS(th)) Max | β | 3.9 V |
| Total Gate Charge (Qg) Max | β | 96 nC |
| Power Dissipation @ TA | β | 3 W |
| Power Dissipation @ TC | β | 217 W |
| Polarity | β | N-Channel |
| Ordering Code Suffix | β | ATMA1 (Tape & Reel, 13-inch) |