ISZ072N06NM6ATMA1 vs ISC060N06NM6ATMA1 Comparison
Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and ISC060N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ072N06NM6ATMA1
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
ISZ072N06NM6ATMA1 β ActiveInfineon
ISC060N06NM6ATMA1
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISZ072N06NM6ATMA1 | ISC060N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.33 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 57 A | β |
| Continuous Drain Current (ID, Ta) | 12.7 A | β |
| RDS(on) max @ VGS=10V | 7.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (Tc=25Β°C) | 50 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) | -55C to +175C (junction, per OptiMOS 6 family) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 (60V generation) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Series | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 15.2 A |
| Continuous Drain Current (ID) at Tc | β | 62 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 50 W |
| Configuration | β | Single N-Channel |
| Gate Drive | β | Standard gate drive (10 V VGS recommended for full RDS(on)) |
| On-State Resistance RDS(on) at VGS=10V | β | [DATA_NEEDED: RDS(on) max in mohm] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ/nC] |