ISZ230N10NM6ATMA1 vs BSC070N10NS5ATMA1 Comparison
Detailed side-by-side comparison of ISZ230N10NM6ATMA1 by Infineon and BSC070N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISZ230N10NM6ATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.68 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (Ta) | 7.7 A | β |
| Continuous Drain Current (Tc) | 31 A | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 48 W | β |
| On-Resistance RDS(on) at VGS=10V | 23 mΞ© (typ, ID=10A) | β |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 Β΅A) | β |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (N-channel trench) |
| Package | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | β |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 80 A |
| RDS(on) max @ VGS=10V | β | 7 mOhm |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg] |
| Power Dissition at TC=25C (Ptot) | β | 83 W |
| Power Dissipation at TA=25C | β | 2.5 W |
| Operating Junction Temperature Range | β | -55 C to +150 C |
| Lead-Free | β | Yes |
| Typical Application | β | Synchronous rectification in SMPS |