ISZ230N10NM6ATMA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of ISZ230N10NM6ATMA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | ISZ230N10NM6ATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.55 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (Ta) | 7.7 A | β |
| Continuous Drain Current (Tc) | 31 A | β |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 48 W | β |
| On-Resistance RDS(on) at VGS=10V | 23 mΞ© (typ, ID=10A) | β |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 Β΅A) | β |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Package | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | [DATA_NEEDED: Tj min/max] |
| Gate Drive Voltage (recommended) | 10 V | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | β |
| Continuous Drain Current (ID, Tc=25C) | β | 60 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | β | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | β | Tape & Reel (T/R) |