ISZ230N10NM6ATMA1 vs BSC109N10NS3GATMA1 Comparison
Detailed side-by-side comparison of ISZ230N10NM6ATMA1 by Infineon and BSC109N10NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ230N10NM6ATMA1
ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon
ISZ230N10NM6ATMA1 β ActiveInfineon
BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
BSC109N10NS3GATMA1 β ActiveSpecification Comparison
| Parameter | ISZ230N10NM6ATMA1 | BSC109N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.95 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (Ta) | 7.7 A | β |
| Continuous Drain Current (Tc) | 31 A | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 48 W | β |
| On-Resistance RDS(on) at VGS=10V | 23 mΞ© (typ, ID=10A) | β |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 Β΅A) | β |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 3 |
| Package | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 63 A |
| Power Dissipation (PD, Tc) | β | 78 W |
| RDS(on) Max | β | 10.9 mOhm at VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | β | 26 nC |
| Pin Count | β | 8 |
| Avalanche Energy Rated | β | Yes |
| Lead-Free | β | Yes |