HMC8411 - 0.01-10GHz GaAs pHEMT LNA | Analog Devices
MPN: HMC8411 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $47.29 | $47.29 |
| 10 | $43.5 | $435.00 |
| 100 | $39.8 | $3,980.00 |
| 500 | $36.2 | $18,100.00 |
| 1,000 | $32.9 | $32,900.00 |
Drop-in alternatives for HMC8411 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
HMC8411LP2FE
β Drop-Inπ Reference alternative (not in catalog)
HMC8411LP2FE
β Drop-Inπ Reference alternative (not in catalog)
HMC8411LP2FE
β Drop-Inπ Reference alternative (not in catalog)
HMC8411LP2FE
β Drop-Inπ Reference alternative (not in catalog)
HMC8411LP2FE
β Drop-Inπ Reference alternative (not in catalog)
HMC8411 Maximum Ratings & Electrical Characteristics
| Frequency Range | 0.01 GHz to 10 GHz |
| Gain | 15.5 dB (typical) |
| Noise Figure | 1.7 dB (typical) |
| Output Third-Order Intercept (OIP3) | [DATA_NEEDED: OIP3 value] dBm |
| Supply Voltage | [DATA_NEEDED: supply voltage] V |
| Supply Current | [DATA_NEEDED: supply current] mA |
| Input Return Loss | [DATA_NEEDED: input return loss] dB |
| Output Return Loss | [DATA_NEEDED: output return loss] dB |
| Package | 6-LFCSP (2x2 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40Β°C to +85Β°C |
| Storage Temperature Range | -65Β°C to +150Β°C |
| ESD Rating | 500 V, Class 1B passed |
| Technology | GaAs pHEMT MMIC |
| RoHS Status | Compliant |
HMC8411 Pin Configuration
| Pin 1 | RFIN β RF input |
| Pin 2 | GND β Ground |
| Pin 3 | VDD β Supply voltage |
| Pin 4 | RFOUT β RF output |
| Pin 5 | GND β Ground |
| Pin 6 | GND β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
HMC8411 is suitable for 6 applications: Cellular Infrastructure, Point-to-Point Radios, Satellite Communications, Radar Systems, Test and Measurement, Software-Defined Radio.
Cellular Infrastructure
The HMC8411 is ideal for cellular base station receiver front-ends, providing low noise figure of 1.7 dB and wideband coverage from 0.01 to 10 GHz. It amplifies weak signals from the antenna while minimizing added noise, improving receiver sensitivity. Its 15.5 dB gain helps overcome subsequent stage losses. The device operates over -40Β°C to +85Β°C, suitable for outdoor base stations. With 50-ohm input/output, it integrates easily into standard RF chains. The LFCSP package allows compact PCB designs, reducing board space in multi-channel systems.
Recommended
Point-to-Point Radios
In point-to-point microwave links, the HMC8411 provides low noise amplification for the receiver, ensuring reliable data transmission over long distances. Its wideband operation covers common frequency bands from 6 to 38 GHz, though the HMC8411 covers up to 10 GHz, making it suitable for sub-10 GHz links. The 1.7 dB noise figure enhances link budget, allowing higher data rates or longer distances. The device's gain of 15.5 dB reduces the need for additional amplification stages. Its small package is ideal for compact radio modules.
Recommended
Satellite Communications
The HMC8411 is used in satellite communication receivers, particularly in L-band and C-band applications up to 10 GHz. Its low noise figure is critical for capturing weak satellite signals. The wideband performance allows it to cover multiple satellite bands with a single LNA. The device's 50-ohm interface simplifies connection to antennas and filters. Operating temperature range of -40Β°C to +85Β°C ensures reliability in outdoor and space-adjacent environments. The LFCSP package is lightweight and suitable for space-constrained designs.
Recommended
Radar Systems
In radar receivers, the HMC8411 provides low-noise amplification of return echoes, improving target detection range. Its wideband operation from 0.01 to 10 GHz covers various radar bands, including S-band and C-band. The 1.7 dB noise figure enhances sensitivity, allowing detection of smaller targets. The device's gain of 15.5 dB helps maintain signal levels for processing. It operates over -40Β°C to +85Β°C, suitable for military and industrial radar. The compact package enables integration into phased array modules.
Recommended
Test and Measurement
The HMC8411 is used in test equipment such as spectrum analyzers and signal generators, where wideband, low-noise amplification is required. Its 0.01 to 10 GHz frequency range covers many test applications. The low noise figure ensures accurate measurements of weak signals. The device's flat gain across frequency helps maintain calibration. It operates over -40Β°C to +85Β°C, suitable for benchtop and portable instruments. The LFCSP package allows for compact instrument designs.
Recommended
Software-Defined Radio
In software-defined radios (SDR), the HMC8411 provides wideband amplification from 0.01 to 10 GHz, covering multiple communication bands. Its low noise figure of 1.7 dB is essential for receiving weak signals across a broad spectrum. The device's 15.5 dB gain boosts signal levels for ADC conversion. It operates over -40Β°C to +85Β°C, suitable for portable and fixed SDR platforms. The 50-ohm interface simplifies connection to antennas and mixers. The compact package is ideal for multi-channel SDR designs.
Recommended
Recommended Products Summary
Engineering reference data for HMC8411 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | HMC8411LP2FE | HMC8411LP2FE | HMC8411LP2FE |
|---|---|---|---|---|
| Package | 6-LFCSP (2x2 mm) | 6-LFCSP (2x2 mm) | 6-LFCSP (2x2 mm) | 6-LFCSP (2x2 mm) |
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Frequency Range | 0.01 GHz to 10 GHz | 0.01 GHz to 10 GHz | 0.01 GHz to 10 GHz | 0.01 GHz to 10 GHz |
| Gain | 15.5 dB | 15.5 dB | 15.5 dB | 15.5 dB |
| Noise Figure | 1.7 dB | 1.7 dB | 1.7 dB | 1.7 dB |
| Supply Voltage | [DATA_NEEDED: supply voltage] V | [DATA_NEEDED: supply voltage] V | [DATA_NEEDED: supply voltage] V | [DATA_NEEDED: supply voltage] V |
| Operating Temperature | -40Β°C to +85Β°C | -40Β°C to +85Β°C | -40Β°C to +85Β°C | -40Β°C to +85Β°C |
| Technology | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT |
Key Differentiators
- Wideband coverage from 0.01 to 10 GHz (vs HMC8411LP2FE)
- Low noise figure of 1.7 dB (vs HMC8411LP2FE)
- GaAs pHEMT technology (vs HMC8411LP2FE)
Design Notes
Ensure proper bias sequencing: apply VDD after RF input is connected to avoid damage. Use a low-noise supply with adequate decoupling (e.g., 100 pF and 0.1 uF capacitors) close to the VDD pin. The supply voltage should be within the specified range; refer to the datasheet for exact values. Incorrect bias can degrade performance or damage the device.
Follow the evaluation board layout (EV1HMC8411LP2F) which uses Rogers 4350 with 50-ohm impedance traces. Keep RF input and output traces short and matched to 50 ohms. Use ground vias around the RF pins to minimize parasitic inductance. The exposed pad should be soldered to a ground plane for thermal and electrical performance.
Avoid exceeding the maximum input power to prevent damage. Ensure the RF input is AC-coupled if DC bias is present. The device is ESD sensitive (500 V Class 1B), so handle with proper ESD precautions. Also, verify the supply voltage and current ratings from the datasheet before design.
Compliance Information
RoHS compliant per Analog Devices product page. No AEC-Q100 qualification for this RF component.
