1EBN1001AEXUMA1 vs 2ED21064S06JXUMA1 Comparison
Detailed side-by-side comparison of 1EBN1001AEXUMA1 by Infineon and 2ED21064S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ ActiveInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ ActiveSpecification Comparison
| Parameter | 1EBN1001AEXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.41 | $0.85 |
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster | — |
| Series | EiceDRIVER™ Boost (1EBN family) | — |
| Configuration | High-Side / Low-Side (non-inverting booster) | Half-Bridge (2 outputs, non-inverting) |
| Number of Outputs | 2 (separate source and sink paths) | — |
| Peak Output Current | ±15 A | — |
| Number of Drivers | 1 | — |
| Input Signal | ASC input, active-clamping disable | — |
| Active Clamping | Yes (very fast reaction time) | — |
| Package | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) | PG-DSO-14 (14-pin SOIC) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40 °C to +125 °C (automotive grade) | -40C to +125C |
| Automotive Qualification | AEC-Q100 qualified | — |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | ROHS3 Compliant |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) | — |
| Function | — | High-Side and Low-Side Gate Driver |
| Topology | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Negative Gate Drive Robustness | — | -0.7 V |