1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
MPN: 1EBN1001AEXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.23 | $6.23 |
| 10 | $5.74 | $57.40 |
| 100 | $5.21 | $521.00 |
| 500 | $4.82 | $2,410.00 |
| 1,000 | $4.41 | $4,410.00 |
1EBN1001AEXUMA1 Overview
An IGBT/MOSFET gate driver booster is an analog power IC placed between an isolated gate driver (such as the Infineon EiceDRIVER™ 1ED family) and a high-current power switch. Its role in the system hierarchy is: gate driver booster -> gate driver -> IGBT/MOSFET -> power inverter. The booster multiplies the source/sink current capability of the primary driver so that large module gate capacitances (often >100 nC) can be charged and discharged quickly, reducing switching losses and improving PWM fidelity at high dV/dt.
Key differentiating features include ±15 A peak output current, integrated active-clamping for Vce monitoring, separate source/sink outputs to tune turn-on and turn-off gate resistors independently, AEC-Q100 qualification, and automotive-grade construction. The device supports very fast short-circuit protection reaction time and an ASC (Active Short Circuit) input signal path tailored to functional-safety requirements in EV traction inverters.
Architecturally, the 1EBN1001AEXUMA1 uses a complementary CMOS output stage with a low-inductance package design that minimizes voltage overshoot at the gate-emitter loop. The exposed pad (DSO EP) provides a low thermal resistance path that dissipates gate-charge power without derating switching frequency. The PG-DSO-14-43 footprint also keeps the high-current loop physically tight, which is critical when driving 600 V/750 V IGBT modules in three-phase inverter bridges.
Typical applications include EV traction inverters (above 10 kW), industrial servo drives, on-board chargers, DC-DC converters for xEV powertrains, and high-power industrial motor drives using IGBT or SiC MOSFET modules. In each topology, the booster sits downstream of the galvanic-isolated primary driver and upstream of the power switch.
Design tip: always place the booster within 2 cm of the power-module gate terminals to keep the gate-loop inductance below 5 nH. Estimate gate-drive power Pgate = Qg × Vge × fsw and verify the exposed-pad PCB copper area satisfies the thermal budget before committing to the layout.
This page synthesizes distributor stock data, AEC-Q100 drop-in alternatives, and practical booster-layout notes that supplement the manufacturer datasheet, giving EV power engineers an actionable single-page reference.
Drop-in alternatives for 1EBN1001AEXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EBN1001AEXUMA1 (same form factor and footprint) — differing in Package, Configuration, Number of Outputs, Operating Temperature, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EBN1001AE
✅ Drop-In📋 Reference alternative (not in catalog)
1ED3142MC12HXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.32 / Unit
View Datasheet →TLE9180D32QKXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$4.71 / Unit
View Datasheet →2ED21064S06JXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.85 / Unit
View Datasheet →2EDL8034G4CXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.55 / Unit
View Datasheet →2EP130RXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.2 / Unit
View Datasheet →1EBN1001AEXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster |
| Series | EiceDRIVER™ Boost (1EBN family) |
| Configuration | High-Side / Low-Side (non-inverting booster) |
| Number of Outputs | 2 (separate source and sink paths) |
| Peak Output Current | ±15 A |
| Number of Drivers | 1 |
| Input Signal | ASC input, active-clamping disable |
| Active Clamping | Yes (very fast reaction time) |
| Package | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40 °C to +125 °C (automotive grade) |
| Automotive Qualification | AEC-Q100 qualified |
| RoHS Status | Compliant |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) |
1EBN1001AEXUMA1 Pin Configuration
| Pin 1 | VCC — Logic supply input (5V/15V domain) |
| Pin 2 | GND — Logic ground reference |
| Pin 3 | IN+ — Non-inverting input from upstream driver |
| Pin 4 | IN- — Inverting input (or tied to GND for single-ended) |
| Pin 5 | ASC — Active Short Circuit input for clamping control |
| Pin 6 | CLAMPDIS — Active clamping disable |
| Pin 7 | VOUT_SRC — Source (turn-on) output to gate |
| Pin 8 | VOUT_SNK — Sink (turn-off) output to gate |
| Pin 9 | DESAT — Desaturation monitoring input for short-circuit detection |
| Pin 10 | FLT — Fault output flag |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | PGND — Power ground (return for gate current) |
| Pin 14 | EP — Exposed thermal pad - connect to PGND copper pour |
Typical Applications
1EBN1001AEXUMA1 is suitable for 6 applications: EV Traction Inverter (Above 10 kW), Industrial Servo Drives, On-Board Charger (OBC) for xEV, High-Power DC-DC Converter (xEV), Solar Inverter / Energy Storage, Industrial Motor Drives (>10 kW).
EV Traction Inverter (Above 10 kW)
The 1EBN1001AEXUMA1 fits EV traction inverters above 10 kW because its ±15 A peak current charges and discharges large IGBT/SiC MOSFET gate capacitances (Qg > 100 nC) in <100 ns, limiting switching losses at 10-20 kHz PWM. Placed downstream of an isolated gate driver (such as 1ED31xx), the booster sources/sinks current directly into the module's gate, enabling 400 A-class inverter stages used in 400 V and 800 V xEV powertrains. AEC-Q100 qualification and the integrated very-fast active-clamping reaction time make this part essential for functional-safety compliant traction designs where desaturation events must be detected within microseconds.
Recommended
Industrial Servo Drives
The 1EBN1001AEXUMA1 supports high-performance industrial servo drives because its ±15 A peak output current and separate source/sink paths handle large IGBT modules in 5-50 kW servo amplifiers with minimal PWM distortion. Industrial servo loops require accurate current sampling at switching frequencies up to 20 kHz, and the booster's low propagation delay preserves control-loop bandwidth. The exposed-pad PG-DSO-14-43 package enables compact PCB designs for integrated servo-drive modules, while the wide operating-temperature range (automotive-grade, -40 °C to +125 °C) ensures reliability in factory-floor environments.
Recommended
On-Board Charger (OBC) for xEV
The 1EBN1001AEXUMA1 fits automotive on-board chargers because its ±15 A peak current drives high-current SiC MOSFET bridges used in 6.6 kW to 22 kW OBC power stages with >96% efficiency. The very fast active-clamping reaction time protects the SiC MOSFETs from short-circuit events during load transients, while AEC-Q100 qualification satisfies automotive functional-safety requirements. The booster's separate turn-on/turn-off outputs allow independent gate-resistor tuning to optimize EMI and switching loss trade-offs specific to OBC PFC and DCDC stages.
Recommended
High-Power DC-DC Converter (xEV)
The 1EBN1001AEXUMA1 fits high-power xEV DC-DC converters because its ±15 A peak current drives the IGBT/SiC primary switches in 1.5-3 kW to 10 kW isolated DCDC stages used between 400 V traction battery and 12 V/48 V aux rails. Low propagation delay and minimal PWM distortion preserve current-mode control accuracy even at high switching frequencies. AEC-Q100 and the automotive-grade temperature rating (-40 °C to +125 °C) ensure reliable operation under the thermal stress of an under-hood environment.
Recommended
Solar Inverter / Energy Storage
The 1EBN1001AEXUMA1 supports string solar inverters and battery-energy-storage systems (BESS) because its ±15 A peak current drives high-current 600 V/1200 V IGBT modules used in 10-50 kW three-phase inverter stages. The exposed-pad package and low-inductance design minimize voltage overshoot at high dV/dt, improving reliability and reducing EMI filtering requirements. The booster's active-clamping functionality is particularly useful in solar/BESS where grid faults and short-circuit events are common.
Recommended
Industrial Motor Drives (>10 kW)
The 1EBN1001AEXUMA1 is ideal for industrial motor drives above 10 kW (pumps, fans, compressors, conveyors) because its ±15 A peak current charges gate capacitances of 600 V/1200 V IGBT modules in under 100 ns, supporting switching frequencies up to 20 kHz with minimal PWM distortion. The exposed pad provides a low thermal-resistance path that lets the booster sustain continuous switching without derating. The ASC input and active-clamping disable features support functional-safety routines in industrial automation systems requiring IEC 61508 SIL-2 compliance.
Recommended
Recommended Products Summary
Engineering reference data for 1EBN1001AEXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EBN1001AE | 1ED3142MC12HXUMA1 | TLE9180D32QKXUMA1 | 2EDL8034G4CXTMA1 |
|---|---|---|---|---|---|
| Package | PG-DSO-14-43 (DSO EP) | PG-DSO-14-43 - same | DSO-14 EP - same family | DSO-14 EP - same family | DSO-14 - same family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Function | Gate-driver booster (current amplifier) | Gate-driver booster - identical | Primary isolated gate driver | Multi-channel half-bridge driver | Half-bridge driver |
| Active Clamping | Yes (very fast) | Yes (very fast) | Yes (DESAT-based) | Yes | No |
| AEC-Q100 Qualified | Yes | Yes | Yes | Yes | No (industrial) |
| Propagation Delay | Low (minimal PWM distortion) | Low | Low | Medium | Medium |
| Target Power Stage | >10 kW (up to 400 A modules) | >10 kW - same | Up to 50 kW | Up to 7 kW | Up to 5 kW |
Key Differentiators
- ±15 A peak current is uniquely high for PG-DSO-14-43 gate-driver boosters (vs 2EDL8034G4CXTMA1)
- AEC-Q100 qualification with very fast active-clamping reaction time (vs 2EDL8034G4CXTMA1)
- Separate source/sink outputs for independent gate-resistor tuning (vs TLE9180D32QKXUMA1)
- Dedicated ASC and CLAMPDIS pins for functional-safety routines (vs 1EBN1001AE (non-T&R))
Design Notes
Keep the 1EBN1001AEXUMA1 within 2 cm of the power-module gate terminal and keep the gate-loop area below 1 cm² to minimize parasitic inductance below 5 nH. The PG-DSO-14-43 exposed pad must be soldered to a continuous copper pour of at least 1 square inch, with thermal vias (4-6 per pad, 0.3 mm drill) connecting to an inner-plane heat spreader to keep junction temperature rise below 30 °C at continuous ±15 A switching.
Separate the gate-driver analog ground (GND, pin 2) and power ground (PGND, pin 13) using a star connection at the booster's PGND pin, with the star point directly under the exposed pad. The gate-driver logic traces (IN+, IN-, ASC, CLAMPDIS, FLT) should be routed over a continuous ground plane on an adjacent layer to shield them from the high-dV/dt switching traces. Estimated: at dV/dt = 10 kV/µs and gate-loop L = 5 nH, voltage overshoot V_overshoot ≈ 50 V, which is within margin for 20 V-rated gate oxides.
Do not omit the gate-source resistors on the source (turn-on) and sink (turn-off) outputs - the booster's separate outputs let you tune turn-on and turn-off resistors independently to control dV/dt and reduce ringing. The DESAT pin blanking capacitor must be sized for the specific IGBT/SiC module t_on time, otherwise short-circuit protection will false-trigger during normal turn-on. Do not exceed the absolute maximum VCC of 18 V or apply reverse polarity on VCC - the part has no internal reverse-battery protection.
Estimated gate-drive power dissipation: P_gate = Qg × Vge × f_sw. For a 200 nC IGBT module at Vge = 15 V and f_sw = 10 kHz, P_gate = 0.030 W per switching event, which is well within the booster's thermal envelope. However, at 100 A module gate charge of 1 µC and 20 kHz, P_gate = 0.300 W is dissipated in the booster; ensure the exposed pad copper pour can dissipate this without exceeding 80 °C junction temperature.
Compliance Information
AEC-Q100 qualified per Infineon product family documentation and DigiKey/Mouser listings. RoHS and REACH compliant per the Infineon product page. Halogen-free status [DATA_NEEDED] - refer to the manufacturer datasheet material declaration.
