1ED3124MC12HXUMA1 vs 1EDI60H12AHXUMA1 Comparison
Detailed side-by-side comparison of 1ED3124MC12HXUMA1 by Infineon and 1EDI60H12AHXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveInfineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3124MC12HXUMA1 | 1EDI60H12AHXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $2.18 |
| Channel Type | Single-channel | β |
| Configuration | High-side / Low-side (non-inverting) | β |
| Number of Drivers | 1 | β |
| Number of Outputs | 1 | β |
| Peak Source Current | 13.5 A | β |
| Peak Sink Current | 14 A | β |
| Isolation Technology | Magnetic coupling (coreless transformer) | Galvanic isolation via coreless transformer |
| Isolation Voltage (RMS) | 5.7 kV | β |
| Transient Overvoltage | 8000 Vpk | β |
| Supply Voltage (VCC2) | 10.5 V to 35 V | β |
| Supply Current (Max) | 1.1 mA | β |
| Propagation Delay (Typ) | 90 ns | β |
| Rise Time | 15 ns | β |
| Fall Time | 30 ns | β |
| Operating Temperature | -40 C to +125 C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Package | PG-DSO-8 (DSO-8) | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| Mounting Type | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | β |
| Target Devices | IGBT, SiC MOSFET | β |
| RoHS Status | Compliant | Compliant |
| Product Type | β | Single-channel high-side gate driver IC |
| Isolation Voltage Rating | β | 1200 V |
| Number of Channels | β | 1 |
| Peak Source Current (typ.) | β | 10.0 A |
| Peak Sink Current (typ.) | β | 9.4 A |
| Output Configuration | β | Separate source and sink (SEP) outputs |
| Input Compatibility | β | CMOS / TTL logic |
| Driven Device | β | IGBT (and MOSFET / SiC compatible) |
| Creepage Distance | β | 8 mm |
| Short-Circuit Protection | β | Short-circuit clamping |
| MSL Level | β | 2 (1 year floor life) |