1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
MPN: 1EDI60H12AHXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.1 | $4.10 |
| 10 | $3.65 | $36.50 |
| 100 | $3.05 | $305.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.18 | $2,180.00 |
1EDI60H12AHXUMA1 Overview
A gate driver IC is a specialized power-management component that sits between a low-power controller (MCU, DSP, FPGA) and a power switch (IGBT, MOSFET, SiC, GaN). It translates low-current PWM logic signals into the high-current gate charge and discharge pulses needed to switch the power device quickly and efficiently. In the broader system hierarchy, gate drivers fall under Power Management > Power MOSFET & IGBT Drivers, which themselves are a subcategory of power management ICs. Galvanically isolated gate drivers add a critical barrier that allows the controller to float at any reference potential up to thousands of volts above ground - essential for high-side switching in half-bridge, full-bridge, and three-phase inverter topologies.
The 1EDI60H12AHXUMA1 features separate source and sink output pins (SEP output) for independent gate-charge and gate-discharge path optimization, allowing designers to add asymmetric gate resistors to fine-tune turn-on/turn-off dV/dt behavior. Built-in short-circuit clamping protects the driven IGBT during desaturation events, while the wide driver-side supply range supports both standard and negative-gate-bias drive schemes used to prevent parasitic turn-on in bridge configurations. The 8mm creepage/clearance of the PG-DSO-8-59 package satisfies reinforced insulation requirements for industrial voltage classes.
Architecturally, the device integrates an on-chip coreless transformer that achieves several kilovolts of reinforced isolation while consuming far less board area than traditional optocoupler-based solutions. On the input side, the driver accepts CMOS/TTL-compatible logic, and on the output side it can directly drive IGBT modules from 600V to 1200V classes, including EconoDUAL, Easy, and PrimePACK footprints with appropriate external gate resistors. Typical propagation delay is in the tens of nanoseconds, making it suitable for switch-mode power conversion up to several hundred kHz.
Typical applications include industrial motor drives (servo, VFD), solar inverters, uninterruptible power supplies (UPS), welding inverters, and induction heating. The combination of 1200V isolation rating and 10A peak drive current also suits the device to driving large SiC MOSFET modules where high dV/dt demands robust isolation. Design considerations include providing adequate local decoupling on both primary and secondary supply pins, sizing gate resistors for the chosen IGBT module, and ensuring the PCB layout respects the 8mm creepage specification by routing no copper under the package body between primary and secondary sides.
Drop-in alternatives for 1EDI60H12AHXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EDI60H12AHXUMA1 (same form factor and footprint) β differing in Isolation Technology, Package, MSL Level, Operating Temperature, Configuration.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1EDI60I12AHXUMA1
β Drop-Inπ Reference alternative (not in catalog)
1ED020I12B2XUMA1
β Drop-Inβ In Stock
$2.65 / Unit
View Datasheet β1ED3122MC12HXUMA1
β Drop-Inβ In Stock
$1.92 / Unit
View Datasheet β1ED3124MC12HXUMA1
β Drop-Inβ In Stock
$1.45 / Unit
View Datasheet β1ED020I12-F2XUMA2
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1EDI2002ASXUMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1EDI60H12AHXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Single-channel high-side gate driver IC |
| Isolation Technology | Galvanic isolation via coreless transformer |
| Isolation Voltage Rating | 1200 V |
| Number of Channels | 1 |
| Peak Source Current (typ.) | 10.0 A |
| Peak Sink Current (typ.) | 9.4 A |
| Output Configuration | Separate source and sink (SEP) outputs |
| Input Compatibility | CMOS / TTL logic |
| Driven Device | IGBT (and MOSFET / SiC compatible) |
| Package | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| Mounting Type | Surface Mount |
| Creepage Distance | 8 mm |
| Short-Circuit Protection | Short-circuit clamping |
| MSL Level | 2 (1 year floor life) |
| RoHS Status | Compliant |
1EDI60H12AHXUMA1 Pin Configuration
| Pin 1 | VDD1 β Primary-side (logic) supply voltage |
| Pin 2 | IN+ β Non-inverting PWM logic input (CMOS/TTL) |
| Pin 3 | IN- β Inverting PWM logic input |
| Pin 4 | GND1 β Primary-side ground (logic reference) |
| Pin 5 | GND2 β Secondary-side ground (gate drive return) |
| Pin 6 | OUT_S β Source (turn-on) gate drive output - SEP output |
| Pin 7 | OUT_R β Sink (turn-off) gate drive output - SEP output |
| Pin 8 | VDD2 β Secondary-side (gate drive) supply voltage |
Typical Applications
1EDI60H12AHXUMA1 is suitable for 7 applications: Industrial Motor Drive (VFD / Servo), Solar String Inverter, Uninterruptible Power Supply (UPS), Welding Inverter, Induction Heating Power Stage, Electric Vehicle (EV) Traction Inverter (SiC MOSFETs), Renewable Energy / Wind Turbine Converter.
Industrial Motor Drive (VFD / Servo)
The 1EDI60H12AHXUMA1 is well suited to industrial variable-frequency drives (VFDs) and servo inverters where IGBT modules in 600V-1200V classes must switch at high dV/dt from a high-side referenced to a floating DC bus. The 1200V reinforced galvanic isolation lets the MCU controller sit on a low-voltage ground while the driver output swings at the bus potential; 10 A source and 9.4 A sink capability charges and discharges the IGBT gate capacitances quickly enough to keep switching losses low at typical 4-16 kHz PWM frequencies. Separate source and sink output pins allow asymmetric gate resistors to slow turn-on dV/dt (reducing EMI) while keeping turn-off fast (reducing switching loss).
Recommended
Solar String Inverter
In solar string inverters the 1EDI60H12AHXUMA1 drives the IGBTs (or SiC MOSFETs) of the DC-AC inverter stage running from a 600-1200 V DC bus. The coreless-transformer isolation eliminates the ground-loop and common-mode current issues that plague bootstrap or non-isolated drivers in floating-bus topologies, and the 10 A peak drive strength is sufficient for the gate charge of typical 100-300 A IGBT modules used in 10-50 kW residential and commercial string inverters. The 8 mm package creepage of the PG-DSO-8-59 satisfies the reinforced insulation creepage required by IEC 62109 for PV inverter power stages.
Recommended
Uninterruptible Power Supply (UPS)
The 1EDI60H12AHXUMA1 serves as the high-side gate driver in on-line UPS inverter stages where the battery bus can be 400-800 VDC and the inverter output must produce clean 120/230 VAC under all load steps. Reinforced 1200V isolation lets the same low-voltage DSP/MCU control both low-side and high-side switches without ground loops, and 10 A peak drive current ensures the IGBTs switch fast enough to keep THD below 3 percent at full rated load. Built-in short-circuit clamping reacts in microseconds to shorted load conditions - critical for UPS reliability when downstream wiring faults occur.
Recommended
Welding Inverter
Welding inverters demand gate drivers that can sustain harsh switching environments with high peak currents, repeated short-circuit transients, and wide temperature swings. The 1EDI60H12AHXUMA1's 10 A source / 9.4 A sink drive delivers the fast edge rates needed for the high-frequency transformer stage to keep the magnetic components small, while its built-in short-circuit clamping protects the IGBTs during the inevitable arc-short events inherent to welding. The 1200V reinforced isolation ensures reliable operation even when the welding arc creates fast common-mode transients on the high-voltage bus.
Recommended
Induction Heating Power Stage
Induction-heating inverters operating at 20-100 kHz benefit from the 1EDI60H12AHXUMA1's combination of 1200V isolation and 10A drive strength. The coreless-transformer isolation survives the high common-mode dV/dt that resonance circuits generate, and the SEP source/sink outputs let designers tune turn-on and turn-off edges independently to balance EMI compliance against switching loss in the resonant tank. The driver's fast propagation delay also supports the precise timing needed for zero-voltage-switching (ZVS) topologies.
Recommended
Electric Vehicle (EV) Traction Inverter (SiC MOSFETs)
In EV traction inverters running on 800 V architectures with SiC MOSFET power stages, the 1EDI60H12AHXUMA1 drives the high-side SiC switches that see the full battery bus voltage. The 1200V isolation comfortably handles the 800V system voltage plus the switching transients, and 10 A peak current is sufficient for most 1200V SiC MOSFET modules in the 200-600 A class. The coreless transformer technology does not suffer the common-mode dv/dt limitations of optocoupler-based drivers, which is critical when switching edges approach 50-100 kV/us.
Recommended
Renewable Energy / Wind Turbine Converter
In wind turbine back-to-back converters (generator-side rectifier plus grid-side inverter), the 1EDI60H12AHXUMA1 drives the IGBTs of the generator-side rectifier where the bus floats at the generator's rectified output. Reinforced 1200V galvanic isolation across the driver allows direct control from a chassis-grounded DSP without any bootstrap supply or charge-pump complexity, and the 10 A drive current suits the medium-power IGBT modules commonly used in multi-MW turbines. Long-term supply continuity from Infineon makes the device appropriate for wind turbine designs with 20+ year service life requirements.
Recommended
Recommended Products Summary
Engineering reference data for 1EDI60H12AHXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDI60I12AHXUMA1 | 1ED020I12B2XUMA1 | 1ED3122MC12HXUMA1 | 1ED3124MC12HXUMA1 | 1ED020I12-F2XUMA2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8-59 (DSO-8, 8mm creepage) | PG-DSO-8-59 - same | PG-DSO-8 - same family | PG-DSO-8 wide-body - same family | PG-DSO-8 wide-body - same family | PG-DSO-8 - same family |
| Isolation Voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Peak Source Current (typ.) | 10.0 A | 10.0 A | ~2.0 A | ~6.0 A | ~6.0 A | ~2.0 A |
| Peak Sink Current (typ.) | 9.4 A | 9.4 A | ~2.0 A | ~6.0 A | ~6.0 A | ~2.0 A |
| Output Configuration | Separate source / sink (SEP) | SEP | SEP | SEP | SEP | SEP |
| Isolation Technology | Coreless transformer (CT) | Coreless transformer | Coreless transformer | Coreless transformer | Coreless transformer | Coreless transformer |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active | Active | Active |
Key Differentiators
- Industry-leading 10A/9.4A drive strength in compact DSO-8 footprint (vs 1ED020I12B2XUMA1)
- Reinforced 1200V isolation via coreless transformer (vs 1ED020I12B2XUMA1)
- Separate source and sink (SEP) output pins (vs 1ED3122MC12HXUMA1)
Design Notes
Place a 100 nF decoupling capacitor as close as possible to VDD1 (pin 1) and another 100 nF ceramic as close as possible to VDD2 (pin 8). Add a 1-10 uF bulk capacitor on each supply pin for high-peak-current transients. Route the primary-side GND1 (pin 4) and secondary-side GND2 (pin 5) as separate ground planes that meet only at the package body - never run logic traces under or across the isolation barrier, since this defeats the 8 mm creepage specification of the PG-DSO-8-59 package.
Do not place any copper (traces, vias, fills) under the package body between primary and secondary sides, even on internal layers. The PG-DSO-8-59's 8 mm creepage is measured externally along the package; internal copper under the package can reduce effective creepage and may cause insulation breakdown at high-voltage transients. Also, never connect OUT_S and OUT_R together externally - they must drive separate gate resistors for the SEP source/sink architecture to function as designed.
Estimated: at 10 A peak and a switching frequency of 16 kHz, the gate driver dissipates approximately 0.15 W from its own quiescent and switching losses; this does not include the gate-charge losses dissipated in the external gate resistors. Size the SEP turn-on and turn-off gate resistors for the specific IGBT module: a typical rule of thumb is Rg_on = 2x Rg_off to slow turn-on dV/dt by ~2x for EMI reduction while keeping turn-off fast for switching-loss minimization. Verify final resistor values against the IGBT datasheet's recommended Rg range and the application's EMI target.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade part). Halogen-free status not explicitly confirmed in verified data.
