1ED3124MU12HXUMA1 vs 1EDB7275FXUMA1 Comparison

Detailed side-by-side comparison of 1ED3124MU12HXUMA1 by Infineon and 1EDB7275FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1ED3124MU12HXUMA1 1EDB7275FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $1.68
Product Type Single-channel isolated gate driver IC Single-channel isolated gate driver IC
Manufacturer Family EiceDRIVER Compact 1ED31xxMU12H (X3 compact) β€”
Peak Output Current (source/sink) 14 A typical β€”
Output Configuration Separate source and sink pins β€”
Galvanic Isolation (rms) 5.7 kV (UL 1577) β€”
Working Voltage (continuous) 1200 V β€”
Common-Mode Transient Immunity (CMTI) 200 kV/us minimum 300 V/ns (minimum)
Propagation Delay (typ.) 90 ns β€”
UVLO Threshold 10.5 V β€”
Isolation Technology Coreless transformer (CT) Coreless transformer (CT) magnetic coupling
Package PG-DSO-8-66 (DSO-8 wide-body) PG-DSO-8 (150 mil DSO, 8-pin)
Creepage Distance >8 mm β€”
Operating Temperature Range -40C to +125C [DATA_NEEDED: full operating temperature range]
Target Switch Types IGBT, power MOSFET, SiC MOSFET β€”
Recommended Switch Class Up to 2300 V IGBT / SiC modules β€”
Mounting Type Surface Mount Surface Mount
MSL Level MSL2 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Topology Supported β€” High-side / low-side, half-bridge (with two parts)
Isolation Voltage (Viso) β€” 3000 Vrms
Peak Source Output Current β€” 5.4 A (typical)
Peak Sink Output Current β€” 9.8 A (typical)
Propagation Delay β€” +6 / -4 ns (typical, see datasheet family)
Supported Switch Technologies β€” Si MOSFET, SiC MOSFET, GaN HEMT
UVLO Protection β€” Yes (secondary side)
Marking Code β€” 1B7275A

Datasheets & Resources

Browse All Products Create BOM Request Quote