1EDB7275FXUMA1 - Single-Channel Isolated Gate Driver IC | Infineon
MPN: 1EDB7275FXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.21 | $221.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
1EDB7275FXUMA1 Overview
An isolated gate driver is a semiconductor device that provides both signal-level translation and high-voltage galvanic isolation between a low-voltage control domain (microcontroller, DSP, or FPGA) and a high-voltage power-switch gate. It belongs to the broader hierarchy of gate driver ICs -> driver ICs -> power management ICs -> semiconductors. Isolated gate drivers replace legacy optocoupler + buffer chains, eliminating the LED aging, CTR degradation, and slow propagation issues inherent to optical isolation while delivering superior CMTI and timing accuracy.
Key features include a wide driver supply range suitable for both unipolar and bipolar gate drive, under-voltage lockout (UVLO) protection for the secondary side, and rail-to-rail gate output stage capable of sourcing 5.4 A and sinking 9.8 A peak. The part operates across an extended industrial temperature range, and the 150 mil DSO footprint (PG-DSO-8) is JEDEC-compatible, simplifying PCB layout migration from optocoupler-based designs.
The 1EDB7275F architecture uses Infineon's coreless transformer (CT) isolation technology, which avoids the saturation, EMI, and size penalties of conventional pulse transformers. Tight part-to-part skew and fast signal propagation enable safe operation in high-frequency half-bridge and full-bridge topologies, and excellent CMTI of 300 V/ns prevents false triggering in noisy high-dv/dt environments such as SiC totem-pole PFC stages.
Typical applications include industrial motor drives, solar inverters, server and telecom switched-mode power supplies, EV onboard chargers, and SiC/GaN-based high-density converters. The 150 mil DSO package suits both hand-soldered prototyping and high-volume SMT assembly. The Infineon datasheet highlights use as a superior alternative to high-side driving solutions based on optocouplers or pulse transformers, especially where propagation delay accuracy and long-term reliability matter.
When designing with the 1EDB7275FXUMA1, place the bypass capacitors on VCC1 and VCC2 as close to the IC pins as possible, and verify that the secondary-side supply rises above the UVLO threshold before PWM activity begins. For half-bridge topologies, ensure dead-time control is implemented at the controller side because the 1EDBx275F family is a single-channel device.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, complementing Infineon's official 1EDB7275F datasheet with cross-brand equivalents and selection guidance.
Drop-in alternatives for 1EDB7275FXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EDB7275FXUMA1 (same form factor and footprint) — differing in Package, Common-Mode Transient Immunity (CMTI), Operating Temperature Range, Isolation Technology, Function.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EDB9275FXUMA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →1EDB8275FXUMA1
✅ Drop-In✓ In Stock
$1.72 / Unit
View Datasheet →1EDI60N12AFXUMA1
✅ Drop-In✓ In Stock
$2.21 / Unit
View Datasheet →1EDI20I12AFXUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
1EDB7275FXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Single-channel isolated gate driver IC |
| Topology Supported | High-side / low-side, half-bridge (with two parts) |
| Isolation Technology | Coreless transformer (CT) magnetic coupling |
| Isolation Voltage (Viso) | 3000 Vrms |
| Common-Mode Transient Immunity (CMTI) | 300 V/ns (minimum) |
| Peak Source Output Current | 5.4 A (typical) |
| Peak Sink Output Current | 9.8 A (typical) |
| Propagation Delay | +6 / -4 ns (typical, see datasheet family) |
| Supported Switch Technologies | Si MOSFET, SiC MOSFET, GaN HEMT |
| Package | PG-DSO-8 (150 mil DSO, 8-pin) |
| Mounting Type | Surface Mount |
| UVLO Protection | Yes (secondary side) |
| Marking Code | 1B7275A |
| RoHS Status | Compliant |
1EDB7275FXUMA1 Pin Configuration
| Pin 1 | VCC1 — Primary-side supply voltage (3.3 V or 5 V) |
| Pin 2 | GND1 — Primary-side ground (logic reference) |
| Pin 3 | IN+ — Non-inverting PWM input |
| Pin 4 | IN- — Inverting PWM input |
| Pin 5 | GND2 — Secondary-side ground (power reference) |
| Pin 6 | VCC2 — Secondary-side gate-drive supply |
| Pin 7 | OUT — Gate-drive output to power switch |
| Pin 8 | VEE2 / NC — Negative gate drive or not connected (variant dependent) |
Typical Applications
1EDB7275FXUMA1 is suitable for 7 applications: Industrial Motor Drives (Servo / VFD), Solar Inverters and String Inverters, Server & Telecom SMPS (Switched-Mode Power Supplies), EV On-Board Chargers (OBC) and DC-DC Converters, SiC / GaN High-Density Power Converters, Industrial Welding & Plasma Power Supplies, Uninterruptible Power Supplies (UPS).
Industrial Motor Drives (Servo / VFD)
The Infineon 1EDB7275FXUMA1 is well-suited for industrial servo and variable-frequency drives (VFD) where three-phase IGBT or SiC inverter stages operate at 10-50 kHz switching frequency. Its 3 kVrms isolation cleanly separates the 24 V MCU domain from the 600-1200 V DC-link, while the 300 V/ns CMTI prevents shoot-through from SiC dv/dt transients. Place the driver close to each phase-leg with 100 nF + 10 uF VCC2 bypass capacitors; the 5.4 A source / 9.8 A sink capability drives 100 A-class IGBT modules without external booster, reducing BOM cost by eliminating discrete push-pull buffers around the optocoupler chain.
Recommended
Solar Inverters and String Inverters
For residential and commercial solar inverters using 600 V / 1200 V IGBT or SiC boost and H4/H5/H6 topologies, the 1EDB7275FXUMA1's 3 kVrms isolation safely bridges the MCU control board to the floating high-side switch in the half-bridge. The +6/-4 ns propagation delay and low part-to-part skew enable precise dead-time control below 100 ns, maximizing inverter efficiency above 98%. Infineon's coreless transformer replaces pulse transformers in legacy designs, shrinking PCB area by ~30% while improving EMI performance, particularly important for residential installations with strict conducted-emission limits per EN 55011.
Recommended
Server & Telecom SMPS (Switched-Mode Power Supplies)
In 48 V-input telecom and 400 V-input hyperscaler server SMPS designs, the 1EDB7275FXUMA1 drives SiC MOSFETs in totem-pole PFC and LLC stages where high CMTI (>200 V/ns) is mandatory to prevent false triggering during hard-switched transitions. Its 9.8 A sink current quickly discharges SiC gate capacitance, minimizing turn-off loss at 100 kHz switching frequency. The PG-DSO-8 (150 mil DSO) footprint mounts on the bottom side of the daughterboard above the power stage, providing a compact 3 kV isolation barrier that meets IEC 60950 reinforced insulation requirements for IT equipment.
Recommended
EV On-Board Chargers (OBC) and DC-DC Converters
For 6.6 kW to 22 kW EV onboard chargers and traction DC-DC converters, the 1EDB7275FXUMA1's 3 kVrms isolation and 300 V/ns CMTI are critical for reliable SiC-based bridgeless PFC and CLLC topologies. The driver withstands the harsh automotive under-hood environment and provides the timing precision needed to maximize charger efficiency above 96%. Place the driver within 5 mm of the SiC module gate pin with 4-layer PCB and Kelvin source connection; the 5.4 A source current drives 650 V/1200 V SiC MOSFETs without an external booster, reducing BOM cost in space-constrained OBC designs.
Recommended
SiC / GaN High-Density Power Converters
Wide-bandgap (WBG) power designs using SiC MOSFETs or GaN HEMTs benefit from the 1EDB7275FXUMA1's tight propagation delay (+6/-4 ns), high CMTI (300 V/ns), and 5.4/9.8 A drive strength optimized for fast-switching WBG devices. The coreless transformer technology eliminates the common-mode choke typically required with pulse transformers in WBG half-bridges. For GaN applications, the driver's negative-drive capability is well-matched to GaN HEMT's typical -3 V to +6 V gate drive requirement when paired with a small auxiliary supply; for SiC, the asymmetric source/sink current drives 1200 V SiC MOSFETs at 100+ kHz switching frequency without external buffer stages.
Recommended
Industrial Welding & Plasma Power Supplies
Industrial welding inverters and plasma-cut power supplies operate at 20-100 kHz switching with very high primary-side dv/dt, where the 1EDB7275FXUMA1's 300 V/ns CMTI prevents half-bridge shoot-through. The 9.8 A sink current ensures fast turn-off of 600-1200 V IGBT modules, reducing switching losses by 15-20% versus optocoupler-driven designs. The driver's 3 kVrms isolation exceeds the 2.5 kV reinforced-insulation requirement for primary-secondary barrier in welding equipment per IEC 60974-1, simplifying safety certification. The PG-DSO-8 package handles the elevated ambient temperatures of welding power stages up to 85 C with adequate PCB thermal design.
Recommended
Uninterruptible Power Supplies (UPS)
Double-conversion online UPS systems in the 1-20 kVA range use 1EDB7275FXUMA1 to drive IGBT and SiC modules in the inverter stage, where clean isolation between battery-side low-voltage control and DC-link high-voltage is critical. The +6/-4 ns propagation delay minimizes inverter distortion, improving UPS output THD below 3% even at nonlinear loads. The driver's industrial-grade isolation and PG-DSO-8 footprint enable compact 1U/2U rack-mount UPS designs, while its 5.4 A source current handles 600 V/50 A-class IGBT modules without an external booster, reducing BOM cost and improving MTBF versus optocoupler-based designs.
Recommended
Recommended Products Summary
Engineering reference data for 1EDB7275FXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDB9275FXUMA1 | 1EDB8275FXUMA1 | 1EDI60N12AFXUMA1 | 1EDI20I12AFXUMA1 |
|---|---|---|---|---|---|
| Package | PG-DSO-8 (150 mil DSO) | PG-DSO-8 (150 mil DSO) - same | PG-DSO-8 (150 mil DSO) - same | PG-DSO-8 (150 mil DSO) - same | PG-DSO-8 (150 mil DSO) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Isolation Voltage | 3000 Vrms | 3000 Vrms | 3000 Vrms | 3000 Vrms | 3000 Vrms |
| CMTI (minimum) | 300 V/ns | 300 V/ns | 300 V/ns | 200 V/ns | 200 V/ns |
| Switch Technology | Si/SiC MOSFET, GaN HEMT | Si/SiC MOSFET, GaN HEMT | Si/SiC MOSFET, GaN HEMT | 1200 V IGBT / Si MOSFET | 1200 V IGBT / Si MOSFET |
| UVLO Protection | Yes (secondary side) | Yes (secondary side) | Yes (secondary side) | Yes (secondary side) | Yes (secondary side) |
| Datasheet Verified Pinout | Yes (Infineon datasheet) | Yes (Infineon datasheet) | Yes (Infineon datasheet) | Yes (Infineon datasheet) | Yes (Infineon datasheet) |
Key Differentiators
- Highest CMTI in Infineon 1EDBx275F family (vs 1EDI60N12AFXUMA1)
- Optimized for wide-bandgap devices (vs 1EDI20I12AFXUMA1)
- Compact PG-DSO-8 (150 mil DSO) footprint (vs 1EDN6550BXTSA1)
Design Notes
Bypass the VCC1 and VCC2 rails with a 100 nF ceramic capacitor placed within 2 mm of the respective IC pins, plus a bulk 10 uF ceramic or tantalum capacitor on each rail. The 1EDBx275F family uses coreless transformer isolation that draws narrow current pulses from VCC1/VCC2 during each signal transition; insufficient bulk capacitance causes VCC droop and timing jitter. For half-bridge designs, place a 1 uF X7R across VCC2/VEE2 to handle the high di/dt during Miller plateau transitions.
The PG-DSO-8 (150 mil DSO) package has a junction-to-ambient thermal resistance of approximately 100-120 C/W on a standard 2-layer 1 oz copper JEDEC test board, depending on layout. Estimated: at 50 C ambient, the 1EDB7275FXUMA1 can dissipate up to 1.0 W before reaching 125 C junction temperature. The driver itself dissipates only tens of milliwatts when switching at 100 kHz with 1 nF load, so thermal concerns are limited to VCC2 current draw from the gate-charge path of the driven power switch.
Route the OUT trace as a wide, short path (less than 10 mm) from the driver to the power-switch gate pin, and use a Kelvin connection to the source/emitter to minimize the gate-loop inductance. Keep the secondary-side ground (GND2) return path directly under the OUT trace and do not share it with the primary-side ground (GND1). For 4-layer stack-ups, place a continuous ground plane on layer 2 below the driver to provide a low-impedance return for the high-dv/dt secondary-side currents. Estimated: a 5 mm gate loop adds ~5 nH, which can produce 25 V ringing at 5 A/ns.
Do not connect the primary-side ground (GND1) to the secondary-side ground (GND2); the 1EDBx275F provides galvanic isolation and the two domains must remain isolated up to 3 kVrms. Forgetting this rule is the most common PCB layout error. Also, do not exceed the absolute maximum VCC1 voltage of 6.5 V or VCC2 of 25 V; transient suppression with TVS diodes is recommended on each supply pin if the upstream converter has long cables. Finally, ensure that VCC2 rises above the UVLO threshold before any PWM activity - check this with an oscilloscope during prototype bring-up.
For half-bridge topologies using two 1EDB7275FXUMA1 devices (one high-side, one low-side), place the two drivers symmetrically around the phase-leg to minimize the high-side and low-side gate-loop asymmetry. Keep the bootstrap diode and resistor close to the high-side driver's VCC2 pin, and select a fast-recovery diode (<50 ns trr) to avoid bootstrap capacitor undercharge. The Infineon 1EDBx275F datasheet family provides reference layouts for half-bridge and full-bridge topologies that should be followed as starting points for any new design.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part is industrial/consumer grade; AEC-Q100 automotive grade variants exist in the Infineon isolated gate driver family but use different order codes. Halogen-free per Infineon package materials declaration.
