1EDB7275FXUMA1 vs 1ED3124MU12HXUMA1 Comparison
Detailed side-by-side comparison of 1EDB7275FXUMA1 by Infineon and 1ED3124MU12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDB7275FXUMA1 - Single-Channel Isolated Gate Driver IC | Infineon
1EDB7275FXUMA1 β ActiveInfineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1EDB7275FXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.89 |
| Product Type | Single-channel isolated gate driver IC | Single-channel isolated gate driver IC |
| Topology Supported | High-side / low-side, half-bridge (with two parts) | β |
| Isolation Technology | Coreless transformer (CT) magnetic coupling | Coreless transformer (CT) |
| Isolation Voltage (Viso) | 3000 Vrms | β |
| Common-Mode Transient Immunity (CMTI) | 300 V/ns (minimum) | 200 kV/us minimum |
| Peak Source Output Current | 5.4 A (typical) | β |
| Peak Sink Output Current | 9.8 A (typical) | β |
| Propagation Delay | +6 / -4 ns (typical, see datasheet family) | β |
| Supported Switch Technologies | Si MOSFET, SiC MOSFET, GaN HEMT | β |
| Package | PG-DSO-8 (150 mil DSO, 8-pin) | PG-DSO-8-66 (DSO-8 wide-body) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: full operating temperature range] | -40C to +125C |
| UVLO Protection | Yes (secondary side) | β |
| Marking Code | 1B7275A | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer Family | β | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | β | 14 A typical |
| Output Configuration | β | Separate source and sink pins |
| Galvanic Isolation (rms) | β | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | β | 1200 V |
| Propagation Delay (typ.) | β | 90 ns |
| UVLO Threshold | β | 10.5 V |
| Creepage Distance | β | >8 mm |
| Target Switch Types | β | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | β | Up to 2300 V IGBT / SiC modules |
| MSL Level | β | MSL2 (per JEDEC J-STD-020) |