1EDB8275FXUMA1 vs 2ED2183S06FXUMA1 Comparison
Detailed side-by-side comparison of 1EDB8275FXUMA1 by Infineon and 2ED2183S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
2ED2183S06FXUMA1 β ActiveSpecification Comparison
| Parameter | 1EDB8275FXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $1.05 |
| Function | Single-channel isolated gate driver | β |
| Number of Channels | 1 | β |
| Isolation Type | Magnetic coupling (coreless transformer) | β |
| Isolation Voltage (Vrms) | 3000 Vrms | β |
| Peak Source Current (typ.) | 5.4 A | β |
| Peak Sink Current (typ.) | 9.8 A | β |
| CMTI (min.) | 300 V/ns | β |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay value] | β |
| Output-side Supply Voltage | Up to 40 V (per datasheet family) | β |
| Input-side Supply Voltage | [DATA_NEEDED: VCC input range] | β |
| UVLO | Yes (input and output side) | β |
| Miller Clamp | Available in family | β |
| Package | PG-DSO-8 (150 mil wide-body) | PG-DSO-8-53 (DSO-8) |
| Operating Temperature Range | -40 C to +125 C (industrial) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Driver Type | β | Half-Bridge Gate Driver |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 (half-bridge: high-side + low-side) |
| Configuration | β | High Side, Low Side, Non-Inverting |
| Maximum Offset Voltage | β | 650 V |
| Output Current (Sink/Source) | β | 2.5 A typical |
| Rise Time | β | 15 ns |
| Fall Time | β | 15 ns |
| Supply Voltage (VCC) | β | 10 V to 20 V |
| Bootstrap Supply (VBS) | β | 10 V to 20 V (typ.) |
| Logic Input Voltage | β | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | β | Non-Inverting |
| Bootstrap Diode | β | Integrated |
| Undervoltage Lockout (UVLO) | β | VCC and VBS |
| Operating Temperature | β | -40 C to +125 C |
| MSL Level | β | 2 |
| Terminal Finish | β | Tin (e3 per JESD-609) |
| Technology | β | SOI (Silicon-On-Insulator) |