1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon
MPN: 1EDB8275FXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.52 | $25.20 |
| 100 | $2.18 | $218.00 |
| 500 | $1.94 | $970.00 |
| 1,000 | $1.72 | $1,720.00 |
1EDB8275FXUMA1 Overview
What is an isolated gate driver? An isolated gate driver is a power-management semiconductor that transfers switching commands from a low-voltage controller to the gate of a high-voltage power transistor (typically an IGBT, MOSFET, or SiC/GaN device) while maintaining galvanic isolation between input and output. Isolated gate drivers sit within the broader power management IC family and are essential building blocks for high-voltage inverters, motor drives, and switched-mode power supplies where safety isolation and high dV/dt noise immunity are mandatory.
The 1EDB8275F family supports supply voltages of up to 40 V on the output side and operates with +6/-4 ns propagation delay matching between channels in dual variants. It is designed for fast-switching silicon carbide (SiC) and gallium nitride (GaN) transistors in high-frequency power-conversion stages. According to the Infineon datasheet, the device integrates input-side and output-side undervoltage lockout (UVLO), short-circuit clamping, and active Miller clamp options.
Typical applications include solar inverters, electric vehicle (EV) onboard chargers, industrial servo drives, and high-density telecom rectifiers. The wide creepage/clearance of the PG-DSO-8 wide-body package supports reinforced insulation per IEC 60747-17, simplifying safety certification of end equipment.
When designing with this device, ensure that the bootstrap supply or isolated DC/DC converter provides sufficient gate-drive headroom for the chosen power switch. Decoupling capacitors must be placed close to VCC and VBS pins to suppress switching noise, and the gate-drive loop inductance must be minimized to avoid ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond the manufacturer datasheet.
Drop-in alternatives for 1EDB8275FXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EDB8275FXUMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Peak Sink Current, Peak Source Current, Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EDB8275FXTMA1
✅ Drop-In📋 Reference alternative (not in catalog)
1EDB7275FXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.68 / Unit
View Datasheet →1EDN8511BXUSA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →2EDN7534FXTMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →1ED3323MC12NXUMA1
✅ Drop-In✓ In Stock
$1.25 / Unit
View Datasheet →2ED2183S06FXUMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →1EDB8275FXUMA1 Maximum Ratings & Electrical Characteristics
| Function | Single-channel isolated gate driver |
| Number of Channels | 1 |
| Isolation Type | Magnetic coupling (coreless transformer) |
| Isolation Voltage (Vrms) | 3000 Vrms |
| Peak Source Current (typ.) | 5.4 A |
| Peak Sink Current (typ.) | 9.8 A |
| CMTI (min.) | 300 V/ns |
| Output-side Supply Voltage | Up to 40 V (per datasheet family) |
| UVLO | Yes (input and output side) |
| Miller Clamp | Available in family |
| Package | PG-DSO-8 (150 mil wide-body) |
| Operating Temperature Range | -40 C to +125 C (industrial) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
1EDB8275FXUMA1 Pin Configuration
| Pin 1 | VDD1 — Input-side supply voltage |
| Pin 2 | GND1 — Input-side ground (logic reference) |
| Pin 3 | IN+ — Non-inverting PWM input |
| Pin 4 | IN- — Inverting PWM input (or tied to GND1 for non-inverting only) |
| Pin 5 | GND2 — Output-side ground (power reference) |
| Pin 6 | VDD2 — Output-side supply voltage (gate-drive rail) |
| Pin 7 | OUT — Gate-drive output to power switch gate |
| Pin 8 | NC — Not connected (per datasheet) |
Typical Applications
1EDB8275FXUMA1 is suitable for 6 applications: Solar Inverter Primary-Side Gate Driving, EV Onboard Charger Totem-Pole PFC, Industrial Servo Drive IGBT Bridge, Telecom Rectifier and Server PSU, Renewable Energy Microinverter, Industrial Welding and Plasma Power.
Solar Inverter Primary-Side Gate Driving
The 1EDB8275FXUMA1 is well-matched to solar-string inverter primary-side gate driving for IGBT and SiC boost/PFC stages. Its 3000 Vrms galvanic isolation supports the reinforced insulation required between the low-voltage DSP/MCU and the high-voltage DC-link switch node, while 300 V/ns CMTI ensures signal integrity at dV/dt values typical of 1200 V SiC modules. The 5.4 A source / 9.8 A sink currents let designers drive 1200 V SiC MOSFETs at switching frequencies of 50-100 kHz without an external booster. Place the driver within 2 cm of the power switch to minimize gate-loop inductance, and use a 4.7 uF X7R decoupling capacitor close to the VCC2 pin.
Recommended
EV Onboard Charger Totem-Pole PFC
In a 22 kW onboard charger totem-pole PFC stage, the 1EDB8275FXUMA1 drives 650 V or 1200 V GaN HEMTs with sub-10 ns propagation delay and 300 V/ns CMTI tolerance. Its PG-DSO-8 wide-body 150 mil package provides the creepage and clearance distances required for reinforced insulation under IEC 60747-17, simplifying end-equipment safety certification. The high sink-current capability (9.8 A) prevents Miller-induced turn-on in half-bridge configurations, a common failure mode in high-density GaN designs. Designers should pair the driver with a low-inductance gate resistor network (typically 2-10 ohm) and a local 100 nF + 4.7 uF decoupling stack.
Recommended
Industrial Servo Drive IGBT Bridge
The 1EDB8275FXUMA1 is a strong fit for industrial servo drives where 600 V/1200 V IGBT modules operate at 8-20 kHz. Its 3000 Vrms isolation supports the reinforced insulation required between the safe-voltage control side and the hazardous-voltage DC bus, while the 300 V/ns CMTI rating tolerates the high dV/dt events of hard-switched IGBT commutation. According to the Infineon datasheet, the driver's input-side UVLO and output-side UVLO provide fault-tolerant behavior during bus undervoltage conditions. Designers can share the same driver footprint across 600 V and 1200 V IGBT modules by changing only the gate resistor value.
Recommended
Telecom Rectifier and Server PSU
For high-density 48 V telecom rectifiers and CRPS server PSUs, the 1EDB8275FXUMA1 drives the primary-side switches of a totem-pole PFC or dual-active-bridge converter. The PG-DSO-8 wide-body package fits the dense layouts common in 1U/2U power supplies, and the 5.4 A peak source current supports 100 V/650 V GaN switches at switching frequencies of 200-500 kHz. The 300 V/ns CMTI ensures robust operation across the wide load transients of dynamic server workloads. Place the driver adjacent to the GaN switch and use a 4-layer PCB with a dedicated ground plane to minimize EMI.
Recommended
Renewable Energy Microinverter
Microinverters attached to individual photovoltaic panels require a compact isolated gate driver that can deliver high drive currents at low cost per watt. The 1EDB8275FXUMA1 meets these needs with 5.4 A / 9.8 A peak drive, 3000 Vrms isolation, and a small PG-DSO-8 wide-body footprint. Its 300 V/ns CMTI is sufficient for the 600 V/1200 V SiC MOSFETs used in modern microinverter designs. The driver's industrial -40 C to +125 C operating range supports outdoor solar installations without additional thermal management. Use a bootstrap or isolated DC/DC supply to power the output-side VCC rail.
Recommended
Industrial Welding and Plasma Power
Industrial welding and plasma-cutting power supplies require isolated gate drivers that can survive the harsh dV/dt of arc-load transients. The 1EDB8275FXUMA1's 300 V/ns CMTI and 3000 Vrms isolation make it a strong candidate for the primary-side IGBT driver in such equipment. Its high sink current (9.8 A) ensures robust turn-off under Miller-induced dv/dt events, while the wide-body package's creepage supports the pollution-degree-2 environment typical of industrial enclosures. Designers should add a small RC snubber across the IGBT to limit voltage overshoot and reduce EMI radiated emissions.
Recommended
Recommended Products Summary
Engineering reference data for 1EDB8275FXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDB8275FXTMA1 | 1EDB7275FXUMA1 | 1EDN8511BXUSA1 | 2EDN7534FXTMA1 | 1ED3323MC12NXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8 (150 mil wide-body) | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same |
| Channel Count | 1 | 1 | 1 | 1 | 2 | 1 | 2 (half-bridge) |
| Isolation Voltage (Vrms) | 3000 Vrms | 3000 Vrms | 3000 Vrms | Non-isolated | Non-isolated | 3000+ Vrms (functional-reinforced) | Non-isolated |
| Topology | Single low-side, isolated | Single low-side, isolated | Single low-side, isolated | Single low-side, non-isolated | Dual low-side, non-isolated | Single, isolated EiceIVER | Half-bridge, non-isolated |
Key Differentiators
- Highest CMTI in PG-DSO-8 wide-body family (vs 1ED3323MC12NXUMA1)
- Galvanic isolation built in (vs 2EDN7534FXTMA1)
- Asymmetric high source/sink drive strength (vs 1EDN8511BXUSA1)
Design Notes
Place the 1EDB8275FXUMA1 within 2 cm of the power switch's gate pin to minimize gate-loop inductance. Use a 4-layer PCB with a continuous ground plane on layer 2 directly under the driver; keep input-side and output-side grounds isolated and connect them only at the driver's GND1/GND2 pins. A 100 nF X7R capacitor plus a 4.7 uF X7R bulk capacitor must be placed within 5 mm of the VDD2 pin to suppress switching-noise-induced UVLO trips.
Estimated: at 100 kHz switching with 5 nC Qg and 18 V VDD2, gate-drive losses are approximately 0.9 W per channel (P_gate = Qg * Vgs * fsw). The PG-DSO-8 wide-body package has a theta_JA of approximately 110 C/W on a 4-layer JEDEC test board, so the junction rises about 100 C above ambient at full power. For continuous operation above 100 kHz, place thermal vias under the exposed pad of the PG-DSO-8 footprint and use at least 1 square inch of top-side copper pour.
Do not connect input-side ground (GND1) to output-side ground (GND2) anywhere except at the driver's pins; an external bridge defeats the galvanic isolation and creates a safety hazard. The IN- pin must not be left floating - tie it to GND1 or drive it with a complementary PWM signal, depending on logic convention. Finally, verify that the bootstrap or isolated DC/DC supply can source the 5.4 A peak transient without droop; an undersized supply causes VDD2 UVLO events and erratic switching.
Compliance Information
RoHS and REACH compliance per Infineon product page. Halogen-free per Infineon datasheet. AEC-Q100 status not confirmed in provided data - confirm with Infineon for automotive applications.
