1EDI60N12AFXUMA1 vs 1EDB7275FXUMA1 Comparison

Detailed side-by-side comparison of 1EDI60N12AFXUMA1 by Infineon and 1EDB7275FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDI60N12AFXUMA1 1EDB7275FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.21 $1.68
Driver Configuration Single high-side, galvanically isolated β€”
Number of Channels 1 β€”
Isolation Type Magnetic (coreless transformer) β€”
Isolation Voltage 1200 V working voltage β€”
Maximum Output Voltage 40 V β€”
Source Current (typ.) 10 A β€”
Sink Current (typ.) 9.4 A β€”
Supply Voltage (VDD) 3.1 V to 17 V β€”
Propagation Delay (typ.) 120 ns β€”
Input Logic Compatibility 3.3 V and 5 V CMOS/TTL β€”
Creepage Distance (min.) 4 mm β€”
Short-Circuit Clamping Yes (separate sink/source outputs) β€”
Operating Temperature -40C to +125C β€”
Package PG-DSO-8-51 (DSO-8) PG-DSO-8 (150 mil DSO, 8-pin)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant
Product Type β€” Single-channel isolated gate driver IC
Topology Supported β€” High-side / low-side, half-bridge (with two parts)
Isolation Technology β€” Coreless transformer (CT) magnetic coupling
Isolation Voltage (Viso) β€” 3000 Vrms
Common-Mode Transient Immunity (CMTI) β€” 300 V/ns (minimum)
Peak Source Output Current β€” 5.4 A (typical)
Peak Sink Output Current β€” 9.8 A (typical)
Propagation Delay β€” +6 / -4 ns (typical, see datasheet family)
Supported Switch Technologies β€” Si MOSFET, SiC MOSFET, GaN HEMT
Operating Temperature Range β€” [DATA_NEEDED: full operating temperature range]
UVLO Protection β€” Yes (secondary side)
Marking Code β€” 1B7275A

Datasheets & Resources

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