1EDN7126GXTMA1 vs 1EDN7146GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7126GXTMA1 by Infineon and 1EDN7146GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 βœ“ Active

Specification Comparison

Parameter 1EDN7126GXTMA1 1EDN7146GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.29 $1.05
Function Single-channel TDI gate driver for GaN HEMT and Si MOSFET β€”
Configuration Non-Inverting β€”
Channel Type Single β€”
Driven Supply Voltage [DATA_NEEDED: VCC max value] β€”
Peak Source Current 1.5 A β€”
Peak Sink Current 1.5 A β€”
Common-Mode Voltage (CMR) 200 V β€”
Input Type Truly Differential Input (TDI) TDI (Truly Differential Inductor)
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] β€”
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] β€”
Operating Temperature Range -40C to +125C β€”
Package PG-VSON-10-4 PG-VSON-10-4
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] 1
RoHS Status Compliant Compliant
Reach Compliant β€”
Lead-Free Yes β€”
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) β€”
Driver Type β€” High-side, single-channel
Number of Drivers β€” 1
Logic Type β€” Non-Inverting
Maximum Bootstrap Voltage (VB) β€” 200 V
Supply Voltage (VCC) β€” 4.5 V to 20 V
Source/Sink Drive Current β€” 500 mA / 500 mA
Gate Drive Voltage β€” Up to 11 V (typ)
Propagation Delay (typ) β€” 40 ns
Rise/Fall Time (typ) β€” [DATA_NEEDED: rise/fall time]
UVLO (VCC) β€” Yes
UVLO (VB) β€” Yes
Bootstrap Diode β€” Integrated
Operating Temperature β€” -40 C to +125 C

Datasheets & Resources

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