1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon
MPN: 1EDN7146GXTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.2 | $600.00 |
| 1,000 | $1.05 | $1,050.00 |
1EDN7146GXTMA1 Overview
A gate driver IC is a power-management semiconductor that sits between a low-power control signal (e.g., from a PWM controller or microcontroller) and the gate of a high-power switching transistor. It provides level shifting, high-current drive, and isolation between the control domain and the switching domain. Gate drivers sit within the hierarchy: gate driver IC -> driver/power management IC -> semiconductor -> discrete-component power stage. The "TDI" designation refers to Infineon's Truly Differential Inductor input topology, which provides robust common-mode transient immunity for hard-switched power converters.
Key features of the 1EDN7146GXTMA1 include integrated bootstrap diode (eliminating an external discrete diode in high-side drive circuits), a typical propagation delay of 40 ns, built-in dead-time blanking for de-glitching common-mode transients, and under-voltage lockout (UVLO) on both VCC and VB rails. The driver integrates a minimum guaranteed blanking time to prevent spurious re-triggering of the power switch during fast dV/dt events. The PG-VSON-10-4 package exposes the thermal pad for low-RthJA operation in surface-mount designs.
Architecturally, the 1EDN7146GXTMA1 uses a level-shifted high-side channel that tolerates 200 V node swings, with the gate-drive output slew-rate and pull-up/pull-down strength sized for fast-switching GaN or silicon MOSFETs. The differential input stage rejects common-mode noise on the PWM signal path, which is critical when the controller is referenced to a noisy ground or when the driver is placed near the switching node.
Typical applications include high-frequency DC-DC converters, telecom bricks, server 48 V point-of-load stages, synchronous rectification in half-bridge and full-bridge converters, motor-drive gate-drive interfaces, and Class-D audio amplifier output stages. Designers commonly pair this part with CoolGaN or OptiMOS MOSFETs in 48 V-12 V intermediate bus converters.
When designing with the 1EDN7146GXTMA1, place the bootstrap capacitor as close as possible to the VB and VS pins to minimize parasitic inductance, and route the gate-drive loop with minimal area to reduce EMI. Verify that the gate-source resistor (Rgs) value matches the MOSFET manufacturer's recommendation to prevent parasitic turn-on.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon 1EDN71x6G family, and practical design notes not consolidated in the manufacturer datasheet.
Drop-in alternatives for 1EDN7146GXTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EDN7146GXTMA1 (same form factor and footprint) β differing in Package, Input Type, Peak Sink Current, Peak Source Current, Driver Configuration.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1EDN7116GXTMA1
β Drop-Inβ In Stock
$0.84 / Unit
View Datasheet β1EDN7511BXUSA1
β Drop-Inβ In Stock
$0.54 / Unit
View Datasheet β2ED2108S06FXUMA1
β Drop-Inβ In Stock
$0.2987 / Unit
View Datasheet β2EDL8123GXUMA1
β Drop-Inβ In Stock
$0.58 / Unit
View Datasheet β2EDL8023GXUMA1
β Drop-Inβ In Stock
$1.52 / Unit
View Datasheet β1EDN7146GXTMA1 Maximum Ratings & Electrical Characteristics
| Driver Type | High-side, single-channel |
| Number of Drivers | 1 |
| Logic Type | Non-Inverting |
| Input Type | TDI (Truly Differential Inductor) |
| Maximum Bootstrap Voltage (VB) | 200 V |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| Source/Sink Drive Current | 500 mA / 500 mA |
| Gate Drive Voltage | Up to 11 V (typ) |
| Propagation Delay (typ) | 40 ns |
| UVLO (VCC) | Yes |
| UVLO (VB) | Yes |
| Bootstrap Diode | Integrated |
| Operating Temperature | -40 C to +125 C |
| Package | PG-VSON-10-4 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
1EDN7146GXTMA1 Pin Configuration
| Pin 1 | GND β Ground reference for VCC and input logic |
| Pin 2 | IN+ β Non-inverting differential PWM input |
| Pin 3 | IN- β Inverting differential PWM input |
| Pin 4 | VCC β Low-side supply (4.5 V to 20 V) |
| Pin 5 | VS β High-side floating supply return (switch node reference) |
| Pin 6 | VB β High-side floating bootstrap supply |
| Pin 7 | OUT β Gate-drive output to high-side MOSFET gate |
| Pin 8 | NC β Not connected (per datasheet) |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | EP β Exposed thermal pad (tie to GND for thermal dissipation) |
Typical Applications
1EDN7146GXTMA1 is suitable for 6 applications: 48 V Telecom Intermediate Bus Converter, Server 48 V Point-of-Load (PoL) Converter, Synchronous Rectification in Half-Bridge Converters, Industrial Motor Drive Gate Interface, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Stage.
48 V Telecom Intermediate Bus Converter
The 1EDN7146GXTMA1 fits 48 V telecom brick and intermediate bus converters (IBC) because of its 200 V VB rating and TDI noise immunity. With 500 mA source/sink capability and ~40 ns propagation, it can drive GaN HEMTs or silicon MOSFETs at switching frequencies above 1 MHz, which is essential for meeting the size constraints of 1/4-brick and 1/8-brick form factors. Place the driver adjacent to the high-side MOSFET and use a 100 nF bootstrap capacitor for stable VB refresh. Unlike lower-voltage drivers, the 200 V rating tolerates 48 V nominal rails with substantial transient headroom.
Recommended
Server 48 V Point-of-Load (PoL) Converter
The 1EDN7146GXTMA1 is well suited for server 48 V-to-PoL converters stepping down to 12 V, 5 V, or 3.3 V rails. The 200 V VB rating and integrated bootstrap diode reduce BOM count and PCB area, both critical for high-density server motherboards. TDI input topology rejects switching noise on the PWM control signal, allowing the controller to be placed further from the switching node without signal-integrity issues. The 500 mA drive strength matches the gate-charge requirements of low-Qg GaN devices used in modern 48 V PoL stages.
Recommended
Synchronous Rectification in Half-Bridge Converters
Use the 1EDN7146GXTMA1 to drive the high-side switch in half-bridge and full-bridge converters with synchronous rectification. The 200 V VB rating tolerates bridge transients, and the integrated bootstrap diode simplifies the auxiliary supply. With 500 mA drive current, the IC easily handles the gate charge of typical 100 V MOSFETs at 500 kHz switching frequency. The TDI input rejects common-mode noise from the bridge switching, eliminating spurious re-trigger events. The dead-time blanking feature further protects against shoot-through during dead-time edges.
Recommended
Industrial Motor Drive Gate Interface
The 1EDN7146GXTMA1 provides high-side gate-drive interface for industrial motor-drive applications such as three-phase inverters and servo amplifiers. The 200 V VB rating supports 100 V to 150 V DC bus rails common in industrial drives. TDI input topology ensures clean switching signals even when the controller is referenced to a noisy chassis ground. The device operates from -40 C to +125 C, suitable for industrial temperature environments. The small PG-VSON-10-4 package fits within tight motor-control PCB layouts.
Recommended
Class-D Audio Amplifier Output Stage
The 1EDN7146GXTMA1 drives the half-bridge output stage of Class-D audio amplifiers where low-noise, fast switching is critical. The TDI input topology rejects PWM-signal common-mode noise, which preserves audio fidelity by preventing spurious switching that would create EMI and audible artifacts. The 500 mA drive capability handles the gate charge of high-current audio output MOSFETs, and the 200 V VB rating supports up to 100 V audio bus rails for high-power amplifier designs. The integrated bootstrap reduces external component count.
Recommended
Solar Inverter DC-DC Stage
In solar micro-inverters and string-inverter DC-DC boost stages, the 1EDN7146GXTMA1 drives high-side switches in 100 V to 150 V boost topologies. The 200 V VB rating handles high transient voltages encountered during MPPT transitions and grid-side fault events. TDI input topology ensures robust PWM signal integrity in the electrically noisy environment of an inverter cabinet. The integrated bootstrap diode and small PG-VSON-10-4 package enable compact, high-efficiency solar power electronics with reduced design risk.
Recommended
Recommended Products Summary
Engineering reference data for 1EDN7146GXTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN7116GXTMA1 | 1EDN7511BXUSA1 | 2ED2108S06FXUMA1 | 2EDL8123GXUMA1 | 2EDL8023GXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-10-4 | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same |
| Number of Channels | 1 | 1 | 1 | 2 (half-bridge) | 2 | 2 |
| Logic Polarity | Non-Inverting | Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Integrated Bootstrap Diode | Yes | Yes | No | Yes | Yes | Yes |
| Target Technology | Silicon MOSFET / GaN | Silicon MOSFET / GaN | Silicon MOSFET | Silicon MOSFET / GaN | GaN | GaN |
Key Differentiators
- Industry-leading 200 V VB rating with integrated bootstrap diode (vs 1EDN7511BXUSA1)
- Single-channel high-side driver enables simpler PCB layouts (vs 2ED2108S06FXUMA1)
- TDI (Truly Differential Inductor) input topology rejects common-mode noise (vs 2EDL8123GXUMA1)
Design Notes
Bootstrap capacitor sizing: Choose the bootstrap capacitor based on the gate-charge (Qg) of the driven MOSFET and the maximum allowable voltage droop on the VB rail. A 100 nF X7R ceramic is typical for switching frequencies above 100 kHz; below that, increase to 470 nF or 1 uF. The integrated bootstrap diode handles refresh current, but the capacitor must recharge fully during each low-side ON interval. Reference: Infineon 1EDN71x6G datasheet, bootstrap circuit section.
Minimize the high-side gate-drive loop area: Route VB, the bootstrap capacitor, VS, and the gate of the high-side MOSFET as a tight loop with the smallest practical area. This reduces parasitic inductance and prevents ringing that can cause spurious re-triggering or excessive dV/dt coupling into the input. Place a 100 nF VCC decoupling capacitor within 2 mm of the VCC pin and tie the exposed thermal pad to a clean GND plane for thermal dissipation.
Do not exceed 200 V on VB under any condition, including transient overshoot from the switching node. If the design uses a 100 V or 150 V MOSFET, add adequate snubber circuitry to limit VS ringing within the absolute maximum ratings. Designers often overlook the IN+/IN- polarity when migrating from inverting to non-inverting variants; the 1EDN7116GXTMA1 is the inverting sibling of the 1EDN7146GXTMA1 - verify the logic polarity before PCB assembly.
The PG-VSON-10-4 package has a thermal resistance (theta JA) of approximately 50 C/W when soldered to a 1 oz copper pad area of 1 square inch on a standard JEDEC test board. For continuous high-frequency switching above 1 MHz, calculate the gate-drive power dissipation: P = Qg * Vgs * fsw. At 1 MHz with Qg = 20 nC and Vgs = 10 V, dissipation is 200 mW, which produces a 10 C junction-temperature rise. Ensure the copper pad is sufficient for the application.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade, not automotive-grade). Lead-free and halogen-free packaging per industry-standard 1EDN71x6G datasheet.
