1EDN7126GXTMA1 vs 2EDN7524GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7126GXTMA1 by Infineon and 2EDN7524GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7126GXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.29 | $0.82 |
| Function | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | β |
| Configuration | Non-Inverting | β |
| Channel Type | Single | β |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | β |
| Peak Source Current | 1.5 A | β |
| Peak Sink Current | 1.5 A | β |
| Common-Mode Voltage (CMR) | 200 V | β |
| Input Type | Truly Differential Input (TDI) | β |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | β |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | β |
| Operating Temperature Range | -40C to +125C | β |
| Package | PG-VSON-10-4 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Reach | Compliant | β |
| Lead-Free | Yes | β |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | β |
| Product Type | β | Low-side gate driver IC |
| Number of Channels | β | 2 (dual) |
| Drive Current (Source/Sink) | β | 5 A peak |
| Input Logic | β | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | β | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | β | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | β | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | β | 1 ns |
| Rise Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Fall Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | β | Rail-to-rail, separate source/sink |
| UVLO Protection | β | Yes |
| Operating Temperature | β | -40 C to +125 C |
| Target Devices | β | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |