2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
MPN: 2EDN7524GXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.68 | $16.80 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
| 3,000 | $0.82 | $2,460.00 |
2EDN7524GXTMA1 Overview
A gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, FPGA, or DSP) and a high-power discrete switch (MOSFET, IGBT, or GaN HEMT). It provides level shifting, high peak-current drive, and isolation of the controller from the switching transients on the power stage. Within the system hierarchy, the 2EDN7524G belongs to the gate-driver family, which sits below the system MCU and above the power-switching devices in DC-DC converters, motor drives, and Class-D audio amplifiers.
Key differentiating specifications include 5 A peak source/sink drive current (sufficient for sub-100 ns switching of large MOSFETs), 1 ns channel-to-channel delay matching (critical for synchronous-rectifier timing), a wide -10 V to +20 V input voltage tolerance on the logic pins, and a propagation delay of around 20 ns. The PG-WSON-8-1 package with an exposed pad provides low thermal resistance and a compact 3 mm x 3 mm footprint for high-density power designs.
The device uses a non-inverting logic topology and provides separate source/sink output stages that can be paralleled for higher drive current. Internal Under-Voltage Lockout (UVLO) protects the power stage by holding the outputs low until the supply rail is stable. The 5 A drive strength enables fast turn-on/turn-off transitions, reducing switching losses in high-frequency applications.
Typical applications include synchronous-rectifier drive in DC-DC buck/boost converters, half-bridge and full-bridge converters, Class-D audio amplifiers, motor-drive power stages, and GaN-based point-of-load converters. Its 1 ns delay matching makes it particularly valuable in synchronous-rectifier and half-bridge topologies where timing skew directly converts to shoot-through losses.
When designing with this part, place bypass capacitors as close as possible to VCC and GND. Use a 4-layer PCB layout with a continuous ground plane under the exposed thermal pad to manage switching transients. Always verify that the gate-drive voltage level matches the requirements of the driven MOSFET or GaN device; for standard MOSFETs, 10 V drive is typical, while enhancement-mode GaN HEMTs often require only 5-6 V.
This page synthesizes distributor pricing, drop-in alternatives drawn from the Infineon 2EDN EiceDRIVER family and competitors, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for 2EDN7524GXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDN7524GXTMA1 (same form factor and footprint) — differing in Package, Input Logic Compatibility, Driver Type, Input Type, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EDN7534FXTMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →2EDN8534FXTMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →2EDN8524RXUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
1EDN7126GXTMA1
✅ Drop-In✓ In Stock
$0.29 / Unit
View Datasheet →1EDN7146GXTMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →1EDN7550BXTSA1
✅ Drop-In✓ In Stock
$0.59 / Unit
View Datasheet →2EDN7524GXTMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Low-side gate driver IC |
| Number of Channels | 2 (dual) |
| Drive Current (Source/Sink) | 5 A peak |
| Input Logic | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | -10 V to +20 V on logic pins |
| Channel-to-Channel Delay Matching | 1 ns |
| Output Stage | Rail-to-rail, separate source/sink |
| UVLO Protection | Yes |
| Operating Temperature | -40 C to +125 C |
| Package | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Target Devices | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |
2EDN7524GXTMA1 Pin Configuration
| Pin 1 | IN1 — Logic input for channel 1 (TTL/CMOS, -10 V to +20 V tolerant) |
| Pin 2 | GND — Ground reference |
| Pin 3 | IN2 — Logic input for channel 2 (TTL/CMOS, -10 V to +20 V tolerant) |
| Pin 4 | VCC — Driver supply voltage (4.5 V to 20 V) |
| Pin 5 | OUT2 — Gate drive output for channel 2 (rail-to-rail) |
| Pin 6 | PGND — Power ground for output stage |
| Pin 7 | OUT1 — Gate drive output for channel 1 (rail-to-rail) |
| Pin 8 | EN — Enable pin (active-high, may be tied to VCC if unused) |
Typical Applications
2EDN7524GXTMA1 is suitable for 6 applications: Synchronous-Rectifier Drive in DC-DC Converters, Half-Bridge and Full-Bridge Power Converters, Class-D Audio Amplifier Power Stage, Brushless DC (BLDC) Motor Drive Power Stage, GaN-Based Point-of-Load Converters, Industrial SMPS Primary-Side Drive.
Synchronous-Rectifier Drive in DC-DC Converters
The 2EDN7524GXTMA1 is purpose-built for synchronous-rectifier drive in buck, boost, and buck-boost converters. Its 1 ns channel-to-channel delay matching ensures the high-side and low-side MOSFETs switch with near-perfect synchronization, minimizing dead time and body-diode conduction losses. The 5 A peak source/sink drive produces sub-20 ns switching transitions on 30-100 V MOSFETs, dramatically reducing switching loss at 500 kHz-2 MHz operation. The -10 V to +20 V input tolerance also protects against ground-bounce transients that occur during hard switching, eliminating the external TVS clamps often required on competing drivers. In a 12 V-to-1 V point-of-load converter, pairing the 2EDN7524G with two OptiMOS or StrongIRFET devices yields >95% efficiency at full load.
Recommended
Half-Bridge and Full-Bridge Power Converters
In half-bridge and full-bridge topologies used in telecom rectifiers, solar inverters, and motor drives, the 2EDN7524GXTMA1 provides two tightly-matched channels that drive the high-side and low-side switches of each leg. The 1 ns matching directly controls shoot-through risk; even 5 ns of skew at high dV/dt can cause catastrophic cross-conduction. With 5 A drive strength, the 2EDN7524G can switch 600 V superjunction MOSFETs in under 50 ns, well within the safe timing window for hard-switched bridge converters. The driver's TTL/CMOS input compatibility also allows direct connection to digital controllers without level shifters. The PG-WSON-8-1 exposed pad keeps the dual-driver junction temperature manageable even at 1 MHz PWM operation.
Recommended
Class-D Audio Amplifier Power Stage
The 2EDN7524GXTMA1 drives the output MOSFETs in Class-D audio amplifiers, where its 5 A peak current and 1 ns channel matching translate directly into audio fidelity. Mismatched timing in Class-D output stages creates dead-time distortion that audibly degrades THD+N; the 1 ns matching of the 2EDN7524G keeps THD+N below 0.01% even at high output levels. The rail-to-rail output stage ensures the MOSFET gate is driven fully on and fully off, minimizing R_DS(on) losses that would otherwise waste battery life in portable speakers. The wide -10 V/+20 V input tolerance also makes the driver robust against ground bounce from the high-current audio output stage. In portable and home-audio designs, the PG-WSON-8-1 footprint enables compact PCB layouts next to the output inductors.
Recommended
Brushless DC (BLDC) Motor Drive Power Stage
In three-phase BLDC motor drives, six MOSFETs are switched in complementary pairs per phase. The 2EDN7524GXTMA1's two-channel architecture maps directly to one half-bridge leg, requiring only three devices per motor (vs. three single-channel drivers). Its 1 ns channel-to-channel matching prevents shoot-through during PWM commutation, which would otherwise damage the MOSFETs and reduce efficiency. The 5 A drive strength supports high-current motor phases (30-100 A peak) by sourcing/sinking gate charge quickly, allowing PWM frequencies up to 100 kHz for silent motor operation. The -10 V/+20 V input tolerance also protects against the severe ground bounce seen when the motor inductance forces rapid current reversals. Industrial and e-mobility BLDC drives benefit from the driver's compact PG-WSON-8-1 footprint.
Recommended
GaN-Based Point-of-Load Converters
The 2EDN7524GXTMA1 is explicitly designed to drive GaN power switching devices in addition to silicon MOSFETs. Enhancement-mode GaN HEMTs switch 5-10x faster than silicon MOSFETs, demanding a gate driver with sub-20 ns propagation delay and very tight channel matching; the 2EDN7524G delivers both. Its rail-to-rail output stage provides the 5-6 V gate-drive levels required by typical GaN devices, and the low-output-impedance driver stage prevents the parasitic turn-on that plagues GaN designs. The -10 V/+20 V input tolerance further protects against the high dV/dt-induced transients common in GaN half-bridges. In 48 V-to-1 V point-of-load converters for data-center and telecom applications, the 2EDN7524G enables switching frequencies above 2 MHz while maintaining >93% efficiency.
Recommended
Industrial SMPS Primary-Side Drive
The 2EDN7524GXTMA1 can drive the primary-side MOSFETs in industrial switch-mode power supplies (SMPS) where its 5 A capability supports fast switching of high-voltage superjunction devices. Although it is a low-side driver, its inputs can be referenced to the switching node in bootstrapped high-side configurations when paired with a level shifter or bootstrap diode. The 1 ns matching supports interleaved PFC and LLC topologies where channel-to-channel synchronization directly impacts efficiency and EMI. The PG-WSON-8-1 package with exposed thermal pad keeps the junction temperature manageable under continuous 1 MHz switching. In industrial SMPS designs targeting 80 PLUS Platinum or Titanium efficiency, the 2EDN7524G enables the high switching frequencies required for compact magnetics.
Recommended
Recommended Products Summary
Engineering reference data for 2EDN7524GXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDN7534FXTMA1 | 2EDN8534FXTMA1 | 2EDN8524RXUMA1 | 1EDN7126GXTMA1 | 1EDN7146GXTMA1 | 1EDN7550BXTSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WSON-8-1 | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same | PG-WSON-8-1 - same |
| Number of Channels | 2 (dual) | 2 (dual) | 2 (dual) | 2 (dual) | 1 (single) | 1 (single) | 1 (single) |
| Channel-to-Channel Delay Matching | 1 ns | <1 ns (tighter) | <1 ns (tighter) | <1 ns (tighter) | N/A (single channel) | N/A (single channel) | N/A (single channel) |
| Input Voltage Tolerance | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V | -10 V to +20 V |
| Optimized Target Device | MOSFET + GaN (general purpose) | MOSFET + GaN | GaN optimized | GaN optimized | MOSFET + GaN | MOSFET + GaN | MOSFET |
| Approx. Unit Price @ 1k | $0.98 | $1.10 - $1.30 | $1.40 - $1.60 | $1.30 - $1.50 | $0.90 - $1.10 | $0.90 - $1.10 | $0.85 - $1.05 |
Key Differentiators
- Dual 5 A channels in a single 8-pin WSON package with 1 ns matching (vs Single-channel drivers like 1EDN7126GXTMA1)
- Wide -10 V to +20 V logic-input voltage tolerance eliminates external protection (vs Competing low-side drivers (e.g., UCC27611))
- Explicit optimization for both silicon MOSFETs and GaN HEMTs (vs MOSFET-only drivers)
Design Notes
Place a 100 nF ceramic bypass capacitor as close as possible to the VCC pin (pin 4) and a 1 uF bulk capacitor on the same node. Use a 4-layer PCB with a continuous ground plane directly beneath the PG-WSON-8-1 exposed thermal pad to minimize switching-loop inductance. The PGND pin (pin 6) should connect to the ground plane with multiple vias to handle the 5 A peak return currents without inductive ringing.
Route the gate-drive output traces (OUT1, OUT2) directly to the driven MOSFET/GaN gate pins using the shortest possible path, and keep the gate-return path (PGND) directly underneath or adjacent to minimize loop area. The 2EDN7524G's -10 V to +20 V input tolerance allows the IN1/IN2 traces to route over the switching node in bootstrap configurations, but always keep them separated from the high-dV/dt OUT traces by at least 0.2 mm to avoid capacitive coupling.
Estimated: at 1 MHz switching with 5 A peak drive into a 30 nC gate-charge MOSFET, the 2EDN7524G dissipates approximately 0.3 W from its output-stage CV_cross losses. The PG-WSON-8-1 package with a 4-layer PCB and a copper-pour area of 1 square inch keeps the junction-to-ambient thermal resistance (theta_JA) around 50 C/W, producing a junction temperature rise of only 15 C at 0.3 W dissipation. No external heatsink is required for typical SMPS applications.
Do not exceed VCC = 20 V absolute maximum; although the logic inputs tolerate +20 V, exceeding this on VCC damages the internal bootstrap and UVLO circuits. Always tie the EN pin to VCC if unused (do not leave floating), and add a 100 kohm pull-down to GND on EN if there is any chance the controller driving it is in high-impedance during power-up. For GaN HEMTs, verify that the gate-drive voltage does not exceed the device's V_GS(max); the 2EDN7524G's rail-to-rail output may need a series gate resistor to limit overshoot.
The 1 ns channel-to-channel matching of the 2EDN7524GXTMA1 is specified at constant temperature and supply; in real circuits, mismatch can vary by 50-200 ps/C with temperature. For half-bridge applications, match the OUT1 and OUT2 trace lengths exactly and place both MOSFETs symmetrically to preserve channel matching in the PCB layout. Add a small series gate resistor (1-10 ohm) on each output to dampen ringing caused by the gate-source and gate-drain capacitances resonating with the package and trace inductances.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - industrial and consumer applications; for automotive designs, contact Infineon for the automotive-grade variant.
