1EDN7136GXTMA1 vs 1EDN7146GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7136GXTMA1 by Infineon and 1EDN7146GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7136GXTMA1

1EDN7136GXTMA1 - 4A Single-Channel GaN Gate Driver | Infineon

1EDN7136GXTMA1 βœ“ Active
Infineon
1EDN7146GXTMA1

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 βœ“ Active

Specification Comparison

Parameter 1EDN7136GXTMA1 1EDN7146GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.02 $1.05
Product Type Low-side gate driver IC β€”
Configuration Single channel, non-inverting β€”
Peak Source Current 4 A β€”
Peak Sink Current 8 A β€”
Target Switch GaN HEMT (CoolGaN) / MOSFET β€”
Input Logic TTL/CMOS compatible β€”
UVLO Yes (VDD under-voltage lockout) β€”
Propagation Delay Sub-nanosecond class β€”
Package PG-VSON-10-4 (leadless, thermal pad) PG-VSON-10-4
Mounting Type Surface Mount Surface Mount
Operating Temperature -40 C to +125 C -40 C to +125 C
MSL Level [DATA_NEEDED: MSL level] 1
RoHS Status Compliant Compliant
Lead-free Yes β€”
Input Voltage (VDD) [DATA_NEEDED: VDD range V] β€”
Output Voltage (GaN gate) Approximately 6 V (regulated) β€”
Driver Type β€” High-side, single-channel
Number of Drivers β€” 1
Logic Type β€” Non-Inverting
Input Type β€” TDI (Truly Differential Inductor)
Maximum Bootstrap Voltage (VB) β€” 200 V
Supply Voltage (VCC) β€” 4.5 V to 20 V
Source/Sink Drive Current β€” 500 mA / 500 mA
Gate Drive Voltage β€” Up to 11 V (typ)
Propagation Delay (typ) β€” 40 ns
Rise/Fall Time (typ) β€” [DATA_NEEDED: rise/fall time]
UVLO (VCC) β€” Yes
UVLO (VB) β€” Yes
Bootstrap Diode β€” Integrated

Datasheets & Resources

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