1EDN7146GXTMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7146GXTMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7146GXTMA1
1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon
1EDN7146GXTMA1 β ActiveInfineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7146GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.84 |
| Driver Type | High-side, single-channel | β |
| Number of Drivers | 1 | 1 |
| Logic Type | Non-Inverting | β |
| Input Type | TDI (Truly Differential Inductor) | Truly Differential Input (TDI) |
| Maximum Bootstrap Voltage (VB) | 200 V | β |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 5.5 V |
| Source/Sink Drive Current | 500 mA / 500 mA | β |
| Gate Drive Voltage | Up to 11 V (typ) | β |
| Propagation Delay (typ) | 40 ns | β |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | β |
| UVLO (VCC) | Yes | β |
| UVLO (VB) | Yes | β |
| Bootstrap Diode | Integrated | β |
| Operating Temperature | -40 C to +125 C | β |
| Package | PG-VSON-10-4 | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | MSL3 |
| Function | β | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | β | Non-inverting, single low-side |
| Peak Source Current | β | 2 A (typ) |
| Peak Sink Current | β | 4 A (typ) |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Propagation Delay (Typ) | β | 9 ns |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| UVLO | β | Yes (VCC and gate-rail monitored) |
| Operating Temperature Range | β | -40 Β°C to +125 Β°C |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |