1EDN7146GXTMA1 vs 1EDN7126GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7146GXTMA1 by Infineon and 1EDN7126GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 1EDN7146GXTMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.29 |
| Driver Type | High-side, single-channel | β |
| Number of Drivers | 1 | β |
| Logic Type | Non-Inverting | β |
| Input Type | TDI (Truly Differential Inductor) | Truly Differential Input (TDI) |
| Maximum Bootstrap Voltage (VB) | 200 V | β |
| Supply Voltage (VCC) | 4.5 V to 20 V | β |
| Source/Sink Drive Current | 500 mA / 500 mA | β |
| Gate Drive Voltage | Up to 11 V (typ) | β |
| Propagation Delay (typ) | 40 ns | β |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | β |
| UVLO (VCC) | Yes | β |
| UVLO (VB) | Yes | β |
| Bootstrap Diode | Integrated | β |
| Operating Temperature | -40 C to +125 C | β |
| Package | PG-VSON-10-4 | PG-VSON-10-4 |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Function | β | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Configuration | β | Non-Inverting |
| Channel Type | β | Single |
| Driven Supply Voltage | β | [DATA_NEEDED: VCC max value] |
| Peak Source Current | β | 1.5 A |
| Peak Sink Current | β | 1.5 A |
| Common-Mode Voltage (CMR) | β | 200 V |
| Propagation Delay (Typ.) | β | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | β | [DATA_NEEDED: tr / tf typical value] |
| Operating Temperature Range | β | -40C to +125C |
| Reach | β | Compliant |
| Lead-Free | β | Yes |
| Input Logic Compatibility | β | 3.3 V / 5 V TTL/CMOS (TDI) |