1EDN7511BXUSA1 vs 1EDN7146GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7511BXUSA1 by Infineon and 1EDN7146GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7511BXUSA1 1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7511BXUSA1 βœ“ Active
Infineon
1EDN7146GXTMA1

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 βœ“ Active

Specification Comparison

Parameter 1EDN7511BXUSA1 1EDN7146GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.54 $1.05
Driver Type Low-Side, Single Channel High-side, single-channel
Number of Channels 1 β€”
Peak Source Current 4 A β€”
Peak Sink Current 8 A β€”
Output Configuration Inverting / Non-Inverting (2 outputs) β€”
Input Logic TTL / CMOS compatible β€”
Propagation Delay [DATA_NEEDED: typical propagation delay in ns] β€”
Delay Matching Β±5 ns β€”
Rise / Fall Time [DATA_NEEDED: rise/fall time into 1 nF load] β€”
Supply Voltage (VCC) [DATA_NEEDED: VCC min/max range] 4.5 V to 20 V
UVLO Protection Yes β€”
Operating Temperature -40 Β°C to +150 Β°C -40 C to +125 C
Package PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Supported Switch Technologies MOSFET, GaN FET β€”
Number of Drivers β€” 1
Logic Type β€” Non-Inverting
Input Type β€” TDI (Truly Differential Inductor)
Maximum Bootstrap Voltage (VB) β€” 200 V
Source/Sink Drive Current β€” 500 mA / 500 mA
Gate Drive Voltage β€” Up to 11 V (typ)
Propagation Delay (typ) β€” 40 ns
Rise/Fall Time (typ) β€” [DATA_NEEDED: rise/fall time]
UVLO (VCC) β€” Yes
UVLO (VB) β€” Yes
Bootstrap Diode β€” Integrated

Datasheets & Resources

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