1EDN7550BXTSA1 vs 2EDN7524GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7550BXTSA1 by Infineon and 2EDN7524GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
1EDN7550BXTSA1 β ActiveInfineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7550BXTSA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.59 | $0.82 |
| Driver Configuration | Single-channel, high-side / low-side | β |
| Input Type | Non-inverting, truly differential | β |
| Peak Source Current | 4 A | β |
| Peak Sink Current | 8 A | β |
| Supply Voltage (VDD max) | 84 V | β |
| Minimum Input Pulse Width | 29 ns | β |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay value] | β |
| Input Common-Mode Range | Up to 150 V | β |
| Channel-to-Channel Matching | 1.0 ns typ. | β |
| Internal Regulator | 4.7 V on input side | β |
| Logic Input Compatibility | TTL / CMOS | β |
| Under-Voltage Lockout (UVLO) | Yes | β |
| Operating Junction Temperature | -40 Β°C to +150 Β°C | β |
| Package | PG-SOT23-6 (SOT-23-6) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Product Type | β | Low-side gate driver IC |
| Number of Channels | β | 2 (dual) |
| Drive Current (Source/Sink) | β | 5 A peak |
| Input Logic | β | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | β | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | β | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | β | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | β | 1 ns |
| Rise Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Fall Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | β | Rail-to-rail, separate source/sink |
| UVLO Protection | β | Yes |
| Operating Temperature | β | -40 C to +125 C |
| Target Devices | β | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |