1N6263 vs 1N5711 Comparison

Detailed side-by-side comparison of 1N6263 by STMicroelectronics and 1N5711 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
1N6263 1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics

1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics

1N6263 βœ“ Active
STMicroelectronics
1N5711 1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 βœ“ Active

Specification Comparison

Parameter 1N6263 1N5711
Brand STMicroelectronics STMicroelectronics
Category Diodes Diodes
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.18
Diode Type Small Signal Schottky (metal-to-silicon junction) Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 60 V β€”
Average Forward Current (IF) 15 mA β€”
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] β€”
Junction Capacitance [DATA_NEEDED: junction capacitance] β€”
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) β€”
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] β€”
Technology Guard-ring Schottky barrier β€”
Application Focus UHF/VHF detection, pulse applications, broad dynamic range β€”
Package DO-35 (axial, through-hole glass) DO-35 (DO-204AH) hermetic axial-lead glass
Mounting Type Through Hole Through-Hole
Number of Elements 1 β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Peak Reverse Voltage (VRRM) β€” 70 V
Continuous Forward Current (IF) β€” 15 mA
Total Capacitance β€” 2 pF
Junction Capacitance (Cj) β€” 1 pF
Dynamic Resistance β€” 35 ohm
Breakdown Voltage (VB) β€” 70 V
Switching Speed β€” Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure β€” Metal-to-silicon junction with PN guard ring
Operating Temperature β€” [DATA_NEEDED: operating temperature range]
Reverse Leakage Current β€” [DATA_NEEDED: reverse leakage current at rated VR]

Datasheets & Resources

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