1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics
MPN: 1N6263 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.34 | $3.40 |
| 100 | $0.22 | $22.00 |
| 500 | $0.16 | $80.00 |
| 1,000 | $0.12 | $120.00 |
1N6263 Overview
A Schottky diode is a semiconductor diode formed by a metal-to-silicon junction rather than a conventional PN junction. This metal-semiconductor barrier stores far less charge than a PN junction, giving Schottky diodes near-zero reverse recovery time and a lower forward voltage drop at comparable currents. Within the power-management hierarchy, the 1N6263 belongs to the family of small-signal switching and detection diodes, sitting below power rectifiers and alongside RF detector diodes such as the 1N5711.
Key differentiating features include a 60 V reverse voltage rating that is high for a small-signal Schottky, ultrafast switching with effectively no reverse recovery, and a guard-ring structure. The guard-ringed metal-on-silicon barrier improves reverse leakage behavior and breakdown stability, allowing use both as an RF detector and as a steering, biasing, or MOS-protection element.
Technically, the low barrier height of the metal-silicon junction yields the low turn-on voltage that makes the device attractive for envelope detection, logarithmic detectors, and video detection circuits. Because switching speed is limited by junction capacitance rather than stored charge, the 1N6263 responds well to fast pulses and high-frequency signals in the UHF/VHF range, where PN small-signal diodes such as the 1N4148 lose detection efficiency.
Typical applications include UHF/VHF signal detection, fast pulse clipping and clamping, protection of MOS devices against voltage excursions, and general-purpose switching in instrumentation. In detector circuits the diode sits directly at the signal node, where its low forward drop extends usable dynamic range.
A key design consideration is that Schottky diodes exhibit higher reverse leakage than PN diodes, and leakage increases strongly with temperature; derate current at elevated ambient temperature. Verify the 15 mA average forward current limit and avoid power rectification duty.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for 1N6263 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1N6263 (same form factor and footprint) β differing in Diode Type, Package, Mounting Type, Power Dissipation, Reverse Recovery Time.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1N5711SB
β Drop-Inβ In Stock
$0.11 / Unit
View Datasheet β1N5711SB
β Drop-Inβ In Stock
$0.11 / Unit
View Datasheet βBAT86,133
β Drop-Inπ Reference alternative (not in catalog)
SD101A
β Drop-Inπ Reference alternative (not in catalog)
1N6263 Maximum Ratings & Electrical Characteristics
| Diode Type | Small Signal Schottky (metal-to-silicon junction) |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V |
| Average Forward Current (IF) | 15 mA |
| Power Dissipation | 400 mW |
| Reverse Recovery Time | Ultrafast (no stored charge, barrier-limited) |
| Technology | Guard-ring Schottky barrier |
| Application Focus | UHF/VHF detection, pulse applications, broad dynamic range |
| Package | DO-35 (axial, through-hole glass) |
| Mounting Type | Through Hole |
| Number of Elements | 1 |
1N6263 Pin Configuration
| Pin 1 | Cathode (K) β Cathode terminal, marked by band on DO-35 glass body |
| Pin 2 | Anode (A) β Anode terminal, opposite the cathode band |
Typical Applications
1N6263 is suitable for 6 applications: UHF/VHF Signal Detection, Fast Pulse Clipping and Clamping, MOS Device Gate Protection, Logarithmic and Video Detectors, General-Purpose Fast Switching in Instrumentation, RF Receiver Front-End Biasing.
UHF/VHF Signal Detection
The 1N6263 fits UHF/VHF envelope and video detection because its metal-to-silicon Schottky junction provides a low turn-on voltage and junction-capacitance-limited switching with no stored reverse recovery charge. The 60 V breakdown also supports high-level detection with a broad dynamic range, so the diode tolerates large signal swings before clamping or breaking down. In a typical detector, the diode is placed directly at the signal node feeding an RC load; its low forward drop lets weak carrier peaks cross the conduction threshold, extending usable sensitivity. Compared with a PN diode such as the 1N4148, detection efficiency at VHF and above is markedly better because no minority-carrier charge must be swept out each cycle.
Recommended
Fast Pulse Clipping and Clamping
For fast pulse shaping, the 1N6263's absence of reverse recovery storage means it clamps and releases within a fraction of a nanosecond, limited only by junction capacitance. This makes it suitable for clipping overshoot on digital and pulse-video lines in the UHF/VHF domain, where a PN diode would inject charge-recovery spikes into the clamped node. The 60 V rating gives generous margin when clamping against supply rails or ground, and the 400 mW dissipation class covers small-signal pulse duty. Designers should keep series resistance in the clamped path to limit diode current, since the 15 mA average rating is small; brief surge events must also respect the datasheet IFSM limit.
Recommended
MOS Device Gate Protection
The 1N6263 serves as a steering and protection element for MOSFET and MOS-IC gates, diverting voltage excursions away from the fragile gate oxide. Its Schottky barrier clamps positive transients at a low forward voltage, and the 60 V reverse rating lets it sit across higher-voltage bias networks than many small-signal Schottky parts. The guard-ring structure stabilizes breakdown, so the diode behaves predictably under repeated transient events. Place the diode close to the protected gate node with short traces to minimize loop inductance, which otherwise degrades clamping at fast edge rates. For ESD-class protection, pair it with a dedicated TVS device; the 1N6263 is best for repetitive circuit-level transients rather than high-energy ESD hits.
Recommended
Logarithmic and Video Detectors
In logarithmic detector and video-detection circuits, the exponential I-V characteristic of a Schottky junction is exploited directly, and the 1N6263's low turn-on voltage plus high breakdown supports a broad dynamic range from weak to strong signals - exactly the 'high level detection' role stated in the ST datasheet. The diode operates into a transimpedance or RC video load, with its junction capacitance setting the upper corner frequency. The 60 V rating ensures the diode never breaks down at the top of the detection range, preserving log-linearity. Temperature compensation of the barrier voltage is required in precision log circuits, typically via a matched diode in the reference arm of the detector.
Recommended
General-Purpose Fast Switching in Instrumentation
Test and measurement instrumentation uses the 1N6263 as a general-purpose fast steering diode in gating, sampling, and pulse-routing circuits. Its ultrafast Schottky action keeps switching transients below the noise floor of sensitive front ends, and the DO-35 through-hole package suits prototyping, repair, and rework on legacy instrument boards where SMD substitution is inconvenient. The 15 mA average current comfortably covers steering and bias duty in signal paths, though it must not be used for supply rectification. Because the glass DO-35 body is mechanically fragile, provide lead strain relief and avoid bending leads close to the body during installation.
Recommended
RF Receiver Front-End Biasing
In RF receiver front ends, the 1N6263 functions as a bias-steering and AGC-element diode, where its low forward drop and negligible charge storage avoid disturbing tuned circuits operating in the VHF/UHF bands. The 60 V reverse rating permits connection across higher-Q inductor swings without avalanche conduction, and the guard-ring structure keeps reverse leakage low enough that detector accuracy is maintained at small signal levels. Layout matters: keep the diode leads very short at UHF, since even the DO-35 package adds parasitic inductance; a surface-mount 1N6263W variant can be used when parasitics dominate. Verify that reverse bias across the diode at peak RF swing stays within the 60 V rating.
Recommended
Recommended Products Summary
Engineering reference data for 1N6263 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1N5711 (Vishay) | 1N5711 (onsemi) | BAT86,133 | SD101A |
|---|---|---|---|---|---|
| Package | DO-35 (axial, through-hole) | DO-35 (axial) - same | DO-35 (axial) - same | DO-35 (axial) - same | DO-35 (axial) - same |
| Brand | STMicroelectronics | Vishay Intertechnology | onsemi | NXP Semiconductors | onsemi |
| Reverse Voltage (VRRM) | 60 V | 70 V | 70 V | 50 V | 40 V |
| Switching Speed | Ultrafast Schottky (no stored charge) | Ultrafast Schottky | Ultrafast Schottky | Small-signal Schottky, ns class | Ultrafast Schottky |
| Primary Application | High-level UHF/VHF detection, pulses | UHF/VHF detection, fast switching | UHF/VHF detection, fast switching | General small-signal Schottky switching | High-speed switching/detection |
Key Differentiators
- Higher reverse voltage for a small-signal Schottky (vs BAT86,133)
- Purpose-built for high-level UHF/VHF detection with broad dynamic range (vs SD101A)
- Equivalent ratings with wider sourcing options (vs 1N5711)
Design Notes
Respect the 15 mA average forward current limit. The 1N6263 is a detector/steering diode, not a rectifier: driving it into power-rectification duty will overheat the small glass body well before the 400 mW dissipation class is exceeded. In clamp circuits, always include series resistance to limit diode current during transient events, and check that reverse bias at maximum signal swing stays below the 60 V VRRM rating with margin.
Estimated: Schottky reverse leakage roughly doubles every 10 C, so a circuit designed at 25 C ambient may see several times the nominal leakage at 70 C inside an enclosure. In precision detector or log circuits this shifts the detection threshold; verify leakage behavior at your maximum ambient temperature from the ST datasheet curves, and derate the effective dynamic range accordingly when the diode is mounted near heat sources.
At UHF/VHF, the axial DO-35 package adds parasitic series inductance and capacitance that limit high-frequency performance. Keep leads cut as short as possible - every millimeter of lead length adds inductance in series with the junction. For detector nodes, place the diode directly at the signal entry point with a short ground return for the RC load. If parasitics dominate, consider the SOD-123 surface-mount 1N6263W variant for a lower-inductance installation.
Compliance Information
Compliance status not stated in the provided web data; verify against the ST product page and datasheet before specifying in regulated products.
