2EDN7524GXTMA1 vs 1EDN7550BXTSA1 Comparison
Detailed side-by-side comparison of 2EDN7524GXTMA1 by Infineon and 1EDN7550BXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDN7524GXTMA1
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 β ActiveInfineon
1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
1EDN7550BXTSA1 β ActiveSpecification Comparison
| Parameter | 2EDN7524GXTMA1 | 1EDN7550BXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.59 |
| Product Type | Low-side gate driver IC | β |
| Number of Channels | 2 (dual) | β |
| Drive Current (Source/Sink) | 5 A peak | β |
| Input Logic | Non-inverting, TTL / 3.3 V CMOS-compatible | β |
| Input Voltage Tolerance | -10 V to +20 V on logic pins | β |
| Supply Voltage (VCC) | 4.5 V to 20 V [DATA_NEEDED: exact range] | β |
| Propagation Delay | 20 ns typical [DATA_NEEDED: exact figure] | β |
| Channel-to-Channel Delay Matching | 1 ns | β |
| Rise Time | 5 ns typical [DATA_NEEDED: exact test condition] | β |
| Fall Time | 5 ns typical [DATA_NEEDED: exact test condition] | β |
| Output Stage | Rail-to-rail, separate source/sink | β |
| UVLO Protection | Yes | β |
| Operating Temperature | -40 C to +125 C | β |
| Package | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad | PG-SOT23-6 (SOT-23-6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Target Devices | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs | β |
| Driver Configuration | β | Single-channel, high-side / low-side |
| Input Type | β | Non-inverting, truly differential |
| Peak Source Current | β | 4 A |
| Peak Sink Current | β | 8 A |
| Supply Voltage (VDD max) | β | 84 V |
| Minimum Input Pulse Width | β | 29 ns |
| Propagation Delay (typ.) | β | [DATA_NEEDED: propagation delay value] |
| Input Common-Mode Range | β | Up to 150 V |
| Channel-to-Channel Matching | β | 1.0 ns typ. |
| Internal Regulator | β | 4.7 V on input side |
| Logic Input Compatibility | β | TTL / CMOS |
| Under-Voltage Lockout (UVLO) | β | Yes |
| Operating Junction Temperature | β | -40 Β°C to +150 Β°C |