2EDN7524GXTMA1 vs 2ED21064S06JXUMA1 Comparison
Detailed side-by-side comparison of 2EDN7524GXTMA1 by Infineon and 2ED21064S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 β ActiveInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 β ActiveSpecification Comparison
| Parameter | 2EDN7524GXTMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.85 |
| Product Type | Low-side gate driver IC | β |
| Number of Channels | 2 (dual) | β |
| Drive Current (Source/Sink) | 5 A peak | β |
| Input Logic | Non-inverting, TTL / 3.3 V CMOS-compatible | β |
| Input Voltage Tolerance | -10 V to +20 V on logic pins | β |
| Supply Voltage (VCC) | 4.5 V to 20 V [DATA_NEEDED: exact range] | 10 V to 20 V |
| Propagation Delay | 20 ns typical [DATA_NEEDED: exact figure] | β |
| Channel-to-Channel Delay Matching | 1 ns | β |
| Rise Time | 5 ns typical [DATA_NEEDED: exact test condition] | β |
| Fall Time | 5 ns typical [DATA_NEEDED: exact test condition] | β |
| Output Stage | Rail-to-rail, separate source/sink | β |
| UVLO Protection | Yes | β |
| Operating Temperature | -40 C to +125 C | -40C to +125C |
| Package | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad | PG-DSO-14 (14-pin SOIC) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | ROHS3 Compliant |
| Target Devices | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs | β |
| Function | β | High-Side and Low-Side Gate Driver |
| Configuration | β | Half-Bridge (2 outputs, non-inverting) |
| Topology | β | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | β | 650 V |
| Source Current (typical) | β | 0.29 A |
| Sink Current (typical) | β | 0.7 A |
| Rise Time (typical) | β | [DATA_NEEDED: rise time] |
| Fall Time (typical) | β | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | β | 100 ns |
| Channel-to-Channel Delay Match | β | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | β | Yes (both channels) |
| Bootstrap Diode | β | Integrated |
| Input Logic Compatibility | β | 3.3 V / 5 V CMOS |
| Negative Gate Drive Robustness | β | -0.7 V |