2EDN7534FXTMA1 vs 2EDN7524GXTMA1 Comparison
Detailed side-by-side comparison of 2EDN7534FXTMA1 by Infineon and 2EDN7524GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDN7524GXTMA1
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 β ActiveSpecification Comparison
| Parameter | 2EDN7534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.82 |
| Driver Type | Low-Side, Dual Channel | β |
| Number of Drivers | 2 | β |
| Peak Output Current | 5 A (source/sink) | β |
| Supply Voltage (VDD) | 4.5 V to 20 V | β |
| Input Voltage Range (logic pins) | -12 V to +22 V (absolute max) | β |
| Propagation Delay (typical) | 19 ns | β |
| Input Logic Compatibility | LV-TTL | β |
| Output Polarity | Non-Inverting | β |
| Output Voltage Clamping | Active, to VDD | β |
| Rise Time (typ.) | [DATA_NEEDED: rise time] | β |
| Fall Time (typ.) | [DATA_NEEDED: fall time] | β |
| Channel-to-Channel Skew | [DATA_NEEDED: channel skew] | β |
| Under-Voltage Lockout | Yes | β |
| Enable Pin | Yes | β |
| Operating Temperature | -40C to +125C | -40 C to +125 C |
| Package | PG-DSO-8 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Product Type | β | Low-side gate driver IC |
| Number of Channels | β | 2 (dual) |
| Drive Current (Source/Sink) | β | 5 A peak |
| Input Logic | β | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | β | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | β | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | β | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | β | 1 ns |
| Rise Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Fall Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | β | Rail-to-rail, separate source/sink |
| UVLO Protection | β | Yes |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Target Devices | β | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |