BSC010N04LSATMA1 vs BSC020N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC010N04LSATMA1 by Infineon and BSC020N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β ActiveInfineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC010N04LSATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.42 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Breakdown Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) Max | +/- 20 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Ta=25C) | 38 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | β |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | β |
| Gate Threshold Voltage VGS(th) Typ | 2 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (Tc=25C) | 139 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (junction) |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Technology | OptiMOS 5 | β |
| Avalanche Rated | 100% avalanche tested | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 28 A |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1 V to 2.2 V (typical range, per datasheet) |
| On-State Resistance (RDS(on)) at VGS=10V | β | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc=25C | β | 96 W |
| Package / Case | β | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Packaging | β | Tape & Reel |
| RoHS Status | β | Compliant |