BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
MPN: BSC020N03LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.86 | $0.86 |
| 10 | $0.74 | $7.40 |
| 100 | $0.62 | $62.00 |
| 500 | $0.54 | $270.00 |
| 1,000 | $0.48 | $480.00 |
| 3,000 | $0.42 | $1,260.00 |
BSC020N03LSGATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used for switching and amplifying electronic signals. It belongs to the discrete power semiconductor family, hierarchically classified as MOSFET -> transistor -> discrete semiconductor. Within the OptiMOS family, the 30V class targets 12V rail point-of-load (POL) conversion, low-voltage motor drive, hot-swap controllers, and battery management switching stages. The OptiMOS 3 generation specifically balances ultra-low RDS(on) with low gate charge (Qg) and small package footprint, enabling higher switching frequency and reduced conduction loss simultaneously.
The BSC020N03LSGATMA1's three defining electrical strengths are its very low RDS(on) (approximately 2.0 mOhm at VGS=10V), 100A pulsed drain current capability at the case, and a compact 5mm x 6mm TDSON-8 footprint with exposed thermal pad for low thermal resistance. According to the Infineon datasheet, the device supports VDS of 30V, VGS of +/-20V, and is fully avalanche-rated, making it robust against inductive switching transients in buck and buck-boost converter designs.
Internally, the part uses Infineon's latest-generation trench MOSFET process, which delivers a per-area figure-of-merit (FOM = RDS(on) x Qg) that is best-in-class for 30V parts in this footprint. This enables either lower conduction loss at the same switching frequency, or higher switching frequency at the same conduction loss - a direct lever for designers to shrink magnetics and output capacitance.
Typical applications include voltage regulator modules (VRMs) for servers and datacom/telecom, synchronous buck converter low-side switches, hot-swap and OR-ing controllers, battery protection and load switching in 12V distributed systems, and DC motor drive stages. The wide VDS rating also makes it suitable for 19V/24V adapter-input buck regulators with adequate headroom.
When designing with this part, prioritize a top-side thermal copper pour directly under the exposed pad, and minimize the source-loop and gate-loop inductance to avoid ringing at the drain node. The exposed pad must be soldered to the PCB for the 96W (Tc) dissipation rating to be meaningful; otherwise, the effective power handling is limited by the 2.5W (Ta) rating.
This page synthesizes Infineon datasheet figures, distributor pricing, drop-in alternatives within the OptiMOS 3 family and from competitor vendors, and practical layout/design notes not consolidated on the manufacturer datasheet front page.
Drop-in alternatives for BSC020N03LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC020N03LSGATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, MSL Level, Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC030N03LSGATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →BSC050N03LSGATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSC120N03LSGATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSC010N04LSATMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →FDMS8672AS
✅ Drop-In📋 Reference alternative (not in catalog)
BSC020N03LSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A |
| Continuous Drain Current (ID) at Tc=25C | 100 A |
| Gate-Source Voltage (VGS) | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | 2.5 W |
| Power Dissipation (PD) at Tc=25C | 96 W |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Package / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
BSC020N03LSGATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1 of TDSON-8) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate control input (drive with VGS=10V for full enhancement) |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin EP | Drain — Drain (on exposed thermal pad - must be soldered to PCB copper for thermal dissipation) |
Safe Operating Area (DC, per Infineon OptiMOS 3 datasheet)
Typical Applications
BSC020N03LSGATMA1 is suitable for 6 applications: Server & Datacom VRM (Voltage Regulator Module), Synchronous Buck Converter Low-Side Switch, Hot-Swap & OR-ing Controllers (12V/24V Rails), Battery Management & Load Switching (12V Systems), DC Motor Drive & Solenoid Switching, Telecom 24V/48V Adapter-Input Buck Regulators.
Server & Datacom VRM (Voltage Regulator Module)
The BSC020N03LSGATMA1 is positioned by Infineon for server and datacom VRM low-side synchronous-rectification roles, where its ~2.0 mOhm RDS(on) at VGS=10V and ultra-low gate charge (Qg) minimize both conduction and switching loss at 300 kHz-1 MHz multiphase operation. Per Infineon's OptiMOS 3 datasheet positioning, the part targets 12V-input multiphase buck converters delivering 30-60A per phase for CPU and ASIC core rails. The 30V VDS rating provides ample headroom for 12V nominal plus transient spikes, while the 100A Tc-rated drain current supports peak phase currents without thermal throttling. Trade-off: the part dissipates roughly I^2 x R conduction loss per phase, so heatsinking the exposed pad with at least 1 sq.in. of top-side copper is critical for sustained operation at full load.
Recommended
Synchronous Buck Converter Low-Side Switch
As a low-side synchronous-rectifier switch in 12V-input buck converters, the BSC020N03LSGATMA1's ~2.0 mOhm RDS(on) reduces rectifier conduction loss versus Schottky-diode solutions, boosting efficiency by 2-4% at 20-30A loads. The 30V VDS rating covers 12V rails plus transient overshoot, while the +/-20V VGS tolerance accepts direct PWM gate drive from standard Infineon gate drivers. Per the OptiMOS 3 family positioning, the device is engineered for fast switching transitions, minimizing dead-time body-diode conduction that would otherwise limit light-load efficiency. Compared to older trench MOSFET generations, this part's lower Qg reduces gate-drive losses, allowing higher switching frequencies and smaller magnetics in the same power stage.
Recommended
Hot-Swap & OR-ing Controllers (12V/24V Rails)
The BSC020N03LSGATMA1 suits 12V and 24V hot-swap and OR-ing controller roles in telecom and server equipment, where its 100A continuous drain current at Tc and 30V VDS rating comfortably handle nominal bus voltages plus inrush transients. Per the Infineon datasheet, the part is fully avalanche-rated, which is essential when disconnecting inductive loads or absorbing transient energy during hot-plug events. The ~2.0 mOhm RDS(on) keeps steady-state conduction loss under 1W at 20A load, eliminating the need for paralleling devices in most 1-2kW systems. Trade-off: an active hot-swap controller IC is still required to manage inrush current (dV/dt) and fault isolation; this MOSFET serves as the switching element only.
Recommended
Battery Management & Load Switching (12V Systems)
In 12V battery-management systems (BMS) and load-switching applications - such as e-mobility auxiliary rails, UPS systems, and portable industrial equipment - the BSC020N03LSGATMA1 acts as the high-current disconnect switch. Its 100A continuous drain current at Tc supports inrush currents from large capacitive loads (e.g., 12V motor-start events), while the 30V VDS rating covers fully charged lead-acid (14.4V) and lithium battery packs (12.6V-16.8V). Per the OptiMOS 3 datasheet, low gate charge reduces driver power and enables fast turn-off for short-circuit protection. Trade-off: a dedicated gate driver or charge-pump is recommended to fully enhance the gate at low battery voltages (VGS=10V must be enforced across the full SoC range).
Recommended
DC Motor Drive & Solenoid Switching
The BSC020N03LSGATMA1 is well-suited for low-voltage DC motor and solenoid switching, including 12V/24V brushed-motor H-bridges and PWM-driven proportional valves. The 100A continuous drain current at Tc handles inrush current from stalled motors (which can reach 5-10x steady-state), while the 30V VDS rating easily covers 24V industrial rails. Per the datasheet, the part is avalanche-rated, critical when switching inductive loads (motors, solenoids, relays) that generate voltage spikes at turn-off. Compared to mechanical relays, this MOSFET offers silent operation, PWM dimming/compatibility, and >1 billion cycle lifetime. Trade-off: an external flyback diode or TVS clamp is recommended for highly inductive loads to keep peak VDS inside the 30V rating.
Recommended
Telecom 24V/48V Adapter-Input Buck Regulators
For telecom point-of-use regulators stepping 24V or 48V adapter inputs down to 12V/5V/3.3V rails, the BSC020N03LSGATMA1 can serve in lower-voltage segments of the conversion chain, particularly in 24V-input buck stages where the 30V VDS provides adequate transient headroom. Per the OptiMOS 3 family datasheet, the part's low Qg x RDS(on) figure-of-merit enables 500 kHz-1 MHz switching for compact adapter designs. The 100A continuous drain current at Tc allows single-phase designs up to 50W, or multiphase designs up to several hundred watts without paralleling. Trade-off: for true 48V-input applications, the VDS rating is insufficient - designers should move to a 60V or 100V OptiMOS family member instead (e.g., BSC066N06NSATMA1 for 60V).
Recommended
Recommended Products Summary
Engineering reference data for BSC020N03LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC030N03LSGATMA1 | BSC050N03LSGATMA1 | BSC010N04LSATMA1 | FDMS8672AS |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (TDSON EP) - same | PG-TDSON-8-1 (TDSON EP) - same | PG-TDSON-8-1 (TDSON EP) - same | PowerPAK SO-8 (TDSON-8 family) - footprint-compatible |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 30 V |
| RDS(on) at VGS=10V | approximately 2.0 mOhm | approximately 3.0 mOhm | approximately 5.0 mOhm | approximately 1.0 mOhm | approximately 3.5 mOhm |
| Process / Family | OptiMOS 3 (Infineon trench) | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | onsemi PowerTrench |
| Approximate Unit Price (qty 1, as of 2026-09-13) | $0.86 | ~$0.70 | ~$0.55 | ~$1.20 | ~$0.95 |
Key Differentiators
- Lowest RDS(on) in Infineon's 30V OptiMOS 3 TDSON-8 family at this price point (vs BSC050N03LSGATMA1)
- Wide 30V VDS rating with 100A continuous drain current at Tc (vs BSC010N04LSATMA1)
- Cross-brand second-source via onsemi FDMS8672AS (vs FDMS8672AS)
Design Notes
The PG-TDSON-8-1 package achieves the 96W (Tc) power-dissipation rating only when the exposed pad is soldered to substantial top-side PCB copper. Estimated: at 30A continuous drain current with RDS(on)=2.0 mOhm, conduction loss alone is I^2 x R = 30^2 x 0.002 = 1.8W; with switching losses at 500 kHz this can rise to 3-4W total. Without proper copper, junction temperature can exceed 150C and trigger thermal shutdown. Design rule: provide at least 1 sq.in. (645 sq.mm) of 2 oz copper on the drain pad and connected inner layers with thermal vias (0.3 mm drill, 1 mm pitch) for sustained high-current operation.
Minimize the source-loop and gate-loop inductance by placing the gate-drive return directly at the source pins (pins 1-3, 5-8), not at the system ground far from the device. Per Infineon's OptiMOS 3 layout guidelines, a 4-layer stack-up with a dedicated ground plane directly under the MOSFET is essential to suppress gate ringing at fast dV/dt edges. Estimated: at 10A switching with 5 ns rise time, even 10 nH of source-loop inductance generates V = L x di/dt = 10 nH x (10A/5ns) = 20V of gate-source ringing - enough to exceed the +/-20V VGS rating. Place the gate-driver output as physically close to pin 4 as possible.
Do not parallel multiple BSC020N03LSGATMA1 devices without individual gate-source resistors (typically 10-100 ohm) on each unit to suppress parasitic oscillations caused by gate-drain Miller capacitance mismatch. Also avoid operating above VGS=10V in linear mode for extended periods - the device is optimized as a switch, not as an analog pass element. Avalanche-rated operation is permitted per the Infineon datasheet but should be limited to the documented single-pulse avalanche energy; repetitive avalanche events degrade the device over time.
Compliance Information
RoHS and REACH compliance per Infineon product page. Halogen-free per JEDEC JS709B. Not AEC-Q100 qualified - this part is targeted at commercial/industrial server, datacom, and telecom applications; for automotive-grade 30V N-MOSFET in TDSON-8, refer to Infineon automotive OptiMOS product line.
