BSC010N04LSATMA1 vs BSC022N04LS6ATMA1 Comparison
Detailed side-by-side comparison of BSC010N04LSATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β ActiveInfineon
BSC022N04LS6ATMA1
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC010N04LSATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.66 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Breakdown Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) Max | +/- 20 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Ta=25C) | 38 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | β |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | β |
| Gate Threshold Voltage VGS(th) Typ | 2 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (Tc=25C) | 139 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Technology | OptiMOS 5 | OptiMOSβ’ 6 (N-channel trench) |
| Avalanche Rated | 100% avalanche tested | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta | β | 27 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Maximum Pulsed Drain Current (IDM) | β | 139 A |
| On-Resistance RDS(on) max | β | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 79 W |
| Channel Type | β | N-Channel |
| Pin Count | β | 8 |
| Operating Temperature | β | -55 C to +175 C (junction) |
| RoHS Status | β | Compliant |