BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
MPN: BSC022N04LS6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.06 | $10.60 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
BSC022N04LS6ATMA1 Overview
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor device used to switch or amplify power in electronic circuits. It belongs to the broader family of transistors, which also includes BJTs and IGBTs. N-channel MOSFETs use electrons as the majority carrier and therefore offer lower on-resistance per unit silicon than equivalent P-channel parts - hence their dominance in high-current, low-voltage DC-DC converters, motor drives and battery-protection switches.
Key features of the BSC022N04LS6ATMA1 include a typical gate threshold around 1.7 V (logic-level compatible), low figure-of-merit (FOM = RDS(on) x Qg), and an operating junction temperature range suitable for industrial environments. The 5x6 mm SuperSO8 footprint combines a compact PCB area with an exposed thermal pad that pulls heat directly into the copper pour, keeping junction temperature rise modest even at tens of amps.
OptiMOS™ 6 represents Infineon's latest generation of trench MOSFETs, characterized by optimized cell pitch, lower parasitic capacitances, and improved avalanche ruggedness. Compared with older OptiMOS™ 3 or 5 generations, the 6 series delivers measurably lower switching losses at the same RDS(on), enabling higher-frequency operation in SMPS designs.
Typical applications for this part include synchronous rectification in 24 V to 40 V DC-DC buck and half-bridge converters, hot-swap and OR-ing switches on server/telecom boards, battery-management and protection FETs in e-mobility and power tools, and motor-drive low-side switches in industrial automation. The low RDS(on) also makes the part attractive as a low-side switch in Class-D audio amplifiers and as a load switch in USB-PD power-path designs.
When designing with this part, ensure the gate driver can supply sufficient peak current to rapidly charge the input capacitance (Qg) at the chosen switching frequency. Always verify SOA at worst-case VIN, IL and duty cycle, and place the gate-drive return path directly adjacent to the source pin to minimize parasitic inductance that would otherwise cause ringing and possible dv/dt-induced turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a faster path from selection to layout.
Drop-in alternatives for BSC022N04LS6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC022N04LS6ATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N04LS6ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC016N04LS6ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC026N04LSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →NTMFS4C022N
✅ Drop-In📋 Reference alternative (not in catalog)
SiRA14DP
✅ Drop-In📋 Reference alternative (not in catalog)
IRF40H210
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BSC022N04LS6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Ta | 27 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| Maximum Pulsed Drain Current (IDM) | 139 A |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 79 W |
| Package | SuperSO8 5x6 (PG-TDSON-8-1) |
| Mounting Type | Surface Mount |
| Channel Type | N-Channel |
| Pin Count | 8 |
| Operating Temperature | -55 C to +175 C (junction) |
| RoHS Status | Compliant |
BSC022N04LS6ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side return) |
| Pin 2 | Source — Source connection (low-side return) |
| Pin 3 | Source — Source connection (low-side return) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection (load) |
| Pin 6 | Drain — Drain connection (load) |
| Pin 7 | Drain — Drain connection (load) |
| Pin 8 | Drain — Drain connection (load) |
Safe Operating Area (estimated)
Typical Applications
BSC022N04LS6ATMA1 is suitable for 6 applications: Synchronous Rectification in 24V-40V DC-DC Converters, Hot-Swap and OR-ing Switches in Server / Telecom Boards, Battery Protection and Load Switch in Power Tools / E-mobility, Low-Side Switch in Industrial Motor Drives, Class-D Audio Amplifier Low-Side Switch, USB-PD and High-Current Load Switch.
Synchronous Rectification in 24V-40V DC-DC Converters
The BSC022N04LS6ATMA1 is ideal as the low-side synchronous rectifier in non-isolated buck converters running from 24 V industrial, 28 V avionic, or 36 V telecom rails. Its 2.2 mOhm RDS(on) at VGS = 10 V keeps conduction losses low, while OptiMOS™ 6's low Qrr reduces body-diode reverse-recovery losses that would otherwise appear as ringing and shoot-through at the SW node. Placed in the low-side position with gate driven by the controller's HS drive output and source bonded to PGND; ensures clean switching at 200-500 kHz, where the part's low FOM (RDS(on) x Qg) outperforms older-generation MOSFETs. The 40 V rating provides 12 V of headroom above a nominal 28 V bus for safe transient handling.
Recommended
Hot-Swap and OR-ing Switches in Server / Telecom Boards
The BSC022N04LS6ATMA1 functions as a low-loss hot-swap or OR-ing MOSFET in 12-40 V server and telecom power-distribution boards, where its 100 A Tc current rating and 2.2 mOhm RDS(on) minimize voltage drop and dissipation during steady-state operation. Hot-swap controllers such as the LTC4218 or TPS2490 drive the gate with controlled slew, and the part's avalanche rating absorbs the inductive kick from PCB traces during plug-in events. For OR-ing diodes replacement, the part delivers an order-of-magnitude lower forward drop than a Schottky; expect a per-board efficiency gain of 0.5-1.5% at 30 A load. Verifying SOA at worst-case transient current and junction temperature is critical; this is normally a static, low-frequency application where switching losses are negligible.
Recommended
Battery Protection and Load Switch in Power Tools / E-mobility
The BSC022N04LS6ATMA1 suits the low-side protection FET position in 18-36 V cordless power tools and e-bike battery packs, where its 40 V rating and 2.2 mOhm RDS(on) keep continuous current path losses well under 1 W at 20 A. Battery-management ICs monitor current and drive the gate to disconnect the pack on over-current or short-circuit events; the part's low RDS(on) also keeps the pack's coulombic efficiency high during discharge. The SuperSO8 5x6 package fits inside the small molded battery housing, and its exposed thermal pad conducts heat directly to the chassis copper. Compared to P-channel protection FETs of equivalent RDS(on), this N-channel device needs a charge pump or bootstrap to fully enhance - a small BOM cost for lower conduction loss.
Recommended
Low-Side Switch in Industrial Motor Drives
The BSC022N04LS6ATMA1 works as the low-side switch in half-bridge or H-bridge motor-drive stages for small industrial automation and robotics applications up to 24 V and 30 A. The OptiMOS™ 6 process minimizes switching losses in the 20-100 kHz PWM range typical of motor control, while the 2.2 mOhm RDS(on) keeps the I^2R dissipation in the low-side path manageable without external heatsinking. Pair it with a dedicated gate-driver IC to supply the necessary peak gate current; the part's low total gate charge Qg is forgiving of slower gate transitions. Designers should still account for body-diode conduction during deadtime - low Qrr from OptiMOS™ 6 helps but does not eliminate the loss.
Recommended
Class-D Audio Amplifier Low-Side Switch
The BSC022N04LS6ATMA1 functions as the low-side switch in a 2 x 50 W to 2 x 100 W Class-D audio amplifier running from a 24-36 V bus, where its 2.2 mOhm RDS(on) and OptiMOS™ 6 switching characteristics translate directly into lower distortion and higher efficiency. The low Qrr of OptiMOS™ 6 is especially valuable in audio: body-diode reverse recovery injects current spikes that the LC output filter cannot fully remove, manifesting as measurable THD. Several leading Class-D amplifier ICs in this power range are tested with the SuperSO8 footprint as the recommended low-side MOSFET, simplifying the design-in. Thermal management is critical at continuous 100 W outputs - provide at least 1 sq inch of copper pour and verify TJ below 100 C for audiophile-grade THD performance.
Recommended
USB-PD and High-Current Load Switch
The BSC022N04LS6ATMA1 suits the high-current path switch in USB-PD adapters, 5 V to 20 V load switches, and other consumer-electronics applications where 5-15 A continuous current must be switched cleanly. The 40 V VDS rating comfortably exceeds any standard USB-PD VBUS level including 20 V and 28 V EPR (Extended Power Range) proposals, while the 2.2 mOhm RDS(on) keeps the VBUS voltage drop under 30 mV at 5 A - well within USB-PD cable compensation tolerances. The part's small SuperSO8 footprint allows it to be placed adjacent to the Type-C connector on the PCB. For fast turn-off on fault events, the gate capacitance is modest and can be pulled low in <1 microsecond by a dedicated load-switch controller.
Recommended
Recommended Products Summary
Engineering reference data for BSC022N04LS6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LS6ATMA1 | BSC016N04LS6ATMA1 | BSC026N04LSATMA1 | NTMFS4C022N | SiRA14DP |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | SuperSO8 5x6 (PG-TDSON-8-1) | SuperSO8 5x6 (PG-TDSON-8-1) - same | SuperSO8 5x6 (PG-TDSON-8-1) - same | SuperSO8 5x6 (PG-TDSON-8-1) - same | SO-8 FL (PowerPAK SO-8 equivalent) - same footprint family | PowerPAK SO-8 - same footprint family |
| VDS max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 2.2 mOhm | 1.4 mOhm (better) | 1.6 mOhm (better) | 2.6 mOhm | 2.2 mOhm (equivalent) | 2.0 mOhm (equivalent) |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | onsemi Trench | Vishay TrenchFET Gen IV |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- Lower RDS(on) than same-package Infineon predecessors (vs BSC026N04LSATMA1)
- Lower RDS(on) than the closest onsemi competitor (vs NTMFS4C022N)
- Higher current rating than the Vishay equivalent in the same footprint (vs SiRA14DP)
Design Notes
Estimated: at 100 A Tc with 79 W Pd, the junction temperature approaches 175 C only with infinite cold-plate cooling - in practice the SuperSO8 5x6 RthJA of approximately 50 C/W (on 1 sq inch of copper) limits continuous dissipation to about 2 W and continuous current to ~30 A without airflow. For 40-50 A continuous operation, design for 4 oz copper or use a topside thermal pad with thermal vias to an internal copper plane. Always validate against the SOA chart in the Infineon datasheet at the worst-case VIN and duty cycle, not just the headline RDS(on) figure.
Place the gate-drive return path (controller GND to MOSFET source) directly adjacent to the source pins (1-3) using a Kelvin connection if the controller supports it. Keep the gate-trace loop area under 5 mm^2 to minimize parasitic inductance that causes gate ringing and possible dv/dt-induced turn-on at high dVDS/dt. The SuperSO8 5x6 footprint already includes an exposed thermal pad - flood the land pattern beneath the package with copper and stitch thermal vias on a 1 mm grid to the inner plane.
Do not assume the SuperSO8 5x6 source-pinout matches a conventional SO-8 - this part uses pins 1-3 as source (and pins 5-8 plus the pad as drain), so swapping it for a P-channel or different-N-channel SO-8 with drain on pins 1-3 will short the supply. Always verify the pinout against the Infineon datasheet before PCB layout. Also, for VGS below 4.5 V the RDS(on) is markedly higher than the headline 2.2 mOhm - design the gate drive for at least 6 V to ensure full enhancement under all temperature conditions.
Estimated: switching losses at 200 kHz with VBUS=24 V, ID=20 A are roughly Psw = 0.5 x VDS x ID x (tr+tf) x fsw. With typical tr/tf of 5 ns from OptiMOS 6, Psw is around 2.4 W. Conduction loss is I^2 x RDS(on) x (1-D) = 400 x 0.0022 x 0.5 = 0.44 W for the low-side MOSFET in a 24 V-to-12 V buck. Total ~3 W means a substantial heatsink or large copper pour is required for continuous operation at 20 A - validate with a thermal camera in the prototype.
Compliance Information
RoHS and lead-free confirmed by DigiKey listing. AEC-Q100 not applicable for this industrial-grade part - Infineon offers automotive-grade variants separately if required.
